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STD7N52DK3 PDF预览

STD7N52DK3

更新时间: 2024-09-28 12:48:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
16页 930K
描述
N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220

STD7N52DK3 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:7.16
Is Samacsys:N其他特性:ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):100 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:525 V最大漏极电流 (Abs) (ID):6.2 A
最大漏极电流 (ID):6 A最大漏源导通电阻:1.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):90 W最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD7N52DK3 数据手册

 浏览型号STD7N52DK3的Datasheet PDF文件第2页浏览型号STD7N52DK3的Datasheet PDF文件第3页浏览型号STD7N52DK3的Datasheet PDF文件第4页浏览型号STD7N52DK3的Datasheet PDF文件第5页浏览型号STD7N52DK3的Datasheet PDF文件第6页浏览型号STD7N52DK3的Datasheet PDF文件第7页 
STD7N52DK3  
STF7N52DK3, STP7N52DK3  
N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220  
SuperFREDmesh3™ Power MOSFET  
Features  
RDS(on)  
max.  
Order codes VDSS  
ID  
Pw  
3
1
STD7N52DK3  
6 A  
90 W  
25 W  
90 W  
DPAK  
STF7N52DK3 525 V < 1.15 Ω 6 A (1)  
STP7N52DK3  
6 A  
1. Limited by package  
100% avalanche tested  
3
3
2
Extremely high dv/dt capability  
Gate charge minimized  
1
2
TO-2201  
TO-220FP  
Very low intrinsic capacitance  
Improved diode reverse recovery  
characteristics  
Figure 1.  
Internal schematic diagram  
Zener-protected  
D(2)  
Application  
Switching applications  
G(1)  
Description  
These devices are N-channel  
SuperFREDmesh3™, a new Power MOSFET  
technology that is obtained via improvements  
applied to STMicroelectronics’ SuperMESH3™  
technology. The resulting product has an  
extremely low on resistance, superior dynamic  
performance, high avalanche capability and a fast  
body-drain recovery diode, making it especially  
suitable for the most demanding applications.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STD7N52DK3  
STF7N52DK3  
STP7N52DK3  
7N52DK3  
7N52DK3  
7N52DK3  
DPAK  
TO-220FP  
TO-220  
Tape and reel  
Tube  
Tube  
October 2010  
Doc ID 16387 Rev 2  
1/16  
www.st.com  
16  

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