是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 6 weeks 2 days | 风险等级: | 1.68 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 222037 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | Transistor | Samacsys Package Category: | TO-XXX (Inc. DPAK) |
Samacsys Footprint Name: | DPAK (TO-252)_2 | Samacsys Released Date: | 2015-07-28 09:15:31 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 110 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 18 A | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.125 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 90 W | 最大脉冲漏极电流 (IDM): | 72 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
STD25NF20 | STMICROELECTRONICS |
类似代替 |
汽车级N沟道200 V、0.10 Ohm典型值、18 A STripFET功率MOSFET | |
STD20N20T4 | STMICROELECTRONICS |
类似代替 |
N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET | |
FQD12N20LTM | FAIRCHILD |
功能相似 |
200V Logic Level N-Channel MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD20NF20_09 | STMICROELECTRONICS |
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N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, T | |
STD21 - APPLICATOR | TE |
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tyco electronics contents | |
STD21-APPLICATOR | TE |
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STD21W | TE |
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STD21W0 | TE |
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STD21W-0 | TE |
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STD and STB Markers | |
STD21W1 | TE |
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STD21W-1 | TE |
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STD and STB Markers | |
STD21W2 | TE |
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STD21W-2 | TE |
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STD and STB Markers |