Datasheet > STD20NF10T4

STD20NF10T4

更新时间： 2024-11-19 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	99K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| TO-252AA

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STD20NF10T4 数据手册

STD20NF10

- 25A IPAK/DPAK

N-CHANNEL 100V - 0.038

Ω

LOW GATE CHARGE STripFET II POWER MOSFET

DS(on)

TYPE

DSS

STD20NF10

100 V

<0.045 Ω

25 A(*)

■

TYPICAL R (on) = 0.038 Ω

EXCEPTIONAL dv/dt CAPABILITY

APPLICATION ORIENTED

CHARACTERIZATION

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1”)

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4”)

IPAK

DPAK

TO-252

(Suffix “T4”)

TO-251

(Suffix “-1”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH-EFFICIENCY DC-DC CONVERTERS

■

UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

100

± 20

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

I (*)

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(•)

Drain Current (pulsed)

100

Total Dissipation at T = 25°C

tot

Derating Factor

0.57

W/°C

V/ns

(1)

(2)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

dv/dt

300

stg

-55 to 175

°C

Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(*) Current Limited by Package

(1) I ≤25A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

j JMAX

(BR)DSS

(2) Starting T = 25 C, I = 10 A, V = 27V

October 2002

1/9

12 3 4 5 6 7...9

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