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STD20NF06L PDF预览

STD20NF06L

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
6页 1181K
描述
种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时):30A;Vgs(th)(V):±20;漏源导通电阻:35mΩ@10V

STD20NF06L 数据手册

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R
STD20NF06L  
60V N-Channel Enhancement Mode Power MOSFET  
UMW  
UMW STD20NF06L  
General Description  
The STD20NF06L uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge.  
It can be used in a wide variety of applications.  
Features  
VDS = 60V,ID =30A  
RDS(ON),25mΩ(Typ) @ VGS =10V  
RDS(ON),30mΩ(Typ) @ VGS =4.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead free product is acquired  
Application  
Load  
Switch  
PWM Application  
Power management  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
UMW STD20NF06L  
UMW STD20NF06L  
TO-252  
330mm  
12mm  
2500  
Absolute Maximum Ratings(TA=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Value  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
60  
V
V
VGS  
±20  
TC=25  
30  
A
Drain Current-ContinuousNote3  
ID  
TC=100℃  
20  
120  
A
Drain Current-PulsedNote1  
IDM  
EAS  
PD  
A
Avalanche EnergyNote4  
72  
mJ  
W
Maximum Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
TC=25℃  
55  
TSTG  
TJ  
-55 to +150  
-55 to +150  
Thermal Resistance  
Parameter  
Symbol  
Min.  
Typ.  
Max  
Unit  
Thermal Resistance,Junction-to-Case  
-
-
2.7  
/W  
R
θJC  
www.umw-ic.com  
1
友台半导体有限公司  

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