Datasheet > STD1NB50

STD1NB50

更新时间： 2024-01-01 12:22:20

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意法半导体 - STMICROELECTRONICS		/
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描述
N - CHANNEL 500V - 7.5ohm - 1.4A IPAK PowerMESH MOSFET

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STD1NB50 数据手册

STD1NB50

N - CHANNEL 500V - 7.5

Ω

- 1.4A IPAK

PowerMESH MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STD1NB50

500V

< 9 Ω

1.4 A

■

TYPICAL R_DS(on)= 7.5 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

FOR SMD DPAK VERSIONCONTACT

SALES OFFICE

IPAK

TO-251

(Suffix ”-1”)

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest R_DS(on)per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

■

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

500

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 k

Gate-source Voltage

)

500

Ω

± 36

1.4

Drain Current (continuous) at T_c= 25 C

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

I_D

0.91

5.6

I_DM( )

•

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.36

3.5

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

T_stg

Storage Temperature

-65 to 150

T_j

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

( 1) I_SD≤1.4A, di/dt ≤ 150 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/8

March 2000

12 3 4 5 6 7 8

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与STD1NB50相关器件

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STD1NB60T4	STMICROELECTRONICS	获取价格	1A, 600V, 8.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
STD1NB80	STMICROELECTRONICS	获取价格	N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET
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STD1NB80T4	STMICROELECTRONICS	获取价格	1A, 800V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
STD1NC40-1	STMICROELECTRONICS	获取价格	N - CHANNEL 400V- 8ohm - 1A - IPAK PowerMESH II MOSFET
STD1NC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK Powe