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STD1LNC60-1 PDF预览

STD1LNC60-1

更新时间: 2024-11-01 23:34:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 276K
描述
N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET

STD1LNC60-1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-251包装说明:IPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.77
雪崩能效等级(Eas):40 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):1 A
最大漏极电流 (ID):1 A最大漏源导通电阻:15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
最大脉冲漏极电流 (IDM):4 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD1LNC60-1 数据手册

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STD1LNC60  
N-CHANNEL 600V - 12- 1A - IPAK/DPAK  
PowerMESH™II MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD1LNC60  
600 V  
< 15 Ω  
1 A  
TYPICAL R (on) = 12 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
3
3
2
1
1
DPAK  
TO-252  
IPAK  
DESCRIPTION  
TO-251  
The PowerMESHII is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
BATTER CHARGER, ADAPTOR AND STAND-  
BY POWER SUPPLY  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
600  
600  
± 30  
1
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
D
Drain Current (continuos) at T = 25°C  
A
C
I
Drain Current (continuos) at T = 100°C  
0.63  
4
A
D
C
I
( )  
Drain Current (pulsed)  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
30  
W
C
Derating Factor  
0.24  
3.5  
W/°C  
V/ns  
°C  
dv/dt(1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
°C  
j
(•)Pulse width limited by safe operating area  
(1)I 1A, di/dt 100A/µs, V V  
, T T  
(BR)DSS j JMAX  
SD  
DD  
February 2001  
1/9  

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