STD19NE06L

更新时间： 2024-01-24 23:51:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	93K
描述
N - CHANNEL 60V - 0.038 ohm - 19A - TO-251/TO-252 STripFET POWER MOSFET

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STD19NE06L 数据手册

STD19NE06L

N - CHANNEL 60V - 0.038 Ω - 19A - TO-251/TO-252

STripFET POWER MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STD19NE06L

60 V

< 0.05 Ω

19 A

■

TYPICAL R_DS(on)= 0.038 Ω

100% AVALANCHE TESTED

LOW GATE CHARGE

APPLICATIONORIENTED

CHARACTERIZATION

■

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest developmentof

STMicroelectronics unique ”Single Feature

Size ” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturingreproducibility.

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

_DM(• )

Drain Current (pulsed)

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.3

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/9

February 1999

12 3 4 5 6 7...9

中文翻译

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与STD19NE06L相关器件

型号	品牌	获取价格	描述	数据表
STD19NE06L1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 19A I(D) \| TO-251AA
STD19NE06L-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 19A I(D) \| TO-251AA
STD19NE06LT4	STMICROELECTRONICS	获取价格	19A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
STD19NE06T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 19A I(D) \| TO-252AA
STD1HNC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerM
STD1HNC60-1	STMICROELECTRONICS	获取价格	N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET
STD1HNK60Z-1	STMICROELECTRONICS	获取价格	1.9A, 600V, 4.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
STD1LNC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 12ohm - 1A - IPAK/DPAK Power
STD1LNC60-1	STMICROELECTRONICS	获取价格	N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET
STD1LNK60Z-1	STMICROELECTRONICS	获取价格	N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET