Datasheet > 晶体管 > 功率场效应晶体管> STD1955NL

STD1955NL

更新时间： 2024-09-28 04:00:23

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	852K
描述
N-Channel E nhancement Mode Field Effect Transistor

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STD1955NL 数据手册

S TU/D1955NL

S amHop Microelectronics C orp.

Arp,12 2005 ver1.2

N-C hannel E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

) Max

55 @ VG S = 10V

80 @ VG S = 4.5V

55V

10A

TO-252 and TO-251 P ackage.

S TU S E R IE S

TO-252AA(D-P AK)

S TD S E R IE S

TO-251(l-P AK)

AB S OL UTE MAXIMUM R ATING S

(T =25 C unles s otherwis e noted)

Unit

Limit

P arameter

S ymbol

Vspike (d)

Drain-S ource Voltage R ating

Drain-S ource Voltage

G S

G ate-S ource Voltage

25 C

Drain C urrent-C ontinuous @ Ta

70 C

-P ulsed ^b

Drain-S ource Diode Forward C urrent ^a

Ta= 25 C

Maximum P ower Dissipation ^a

Ta=70 C

Operating J unction and S torage

Temperature R ange

-55 to 175

TJ , TS TG

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C ase

C/W

J C

J A

Thermal R esistance, J unction-to-Ambient

12 3 4 5 6 7 8

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