Datasheet > STD18N60M6

STD18N60M6

更新时间： 2024-09-29 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	501K
描述
N沟道600 V、230 mOhm典型值、13 A MDmesh M6功率MOSFET，DPAK封装

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中文翻译

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技术参数
数据手册

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STD18N60M6 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	16 weeks
风险等级：	2.29	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STD18N60M6 数据手册

STD18N60M6

Datasheet

N-channel 600 V, 230 mΩ typ., 13 A MDmesh M6 Power MOSFET

in a DPAK package

Features

TAB

DS(on)

max.

Order code

STD18N60M6

600 V

280 mΩ

13 A

•

Reduced switching losses

DPAK

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

D(2, TAB)

Zener-protected

G(1)

Applications

•

Switching applications

LLC converters

S(3)

Boost PFC converters

AM01476v1_tab

Description

The new MDmesh M6 technology incorporates the most recent advancements to the

well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics

builds on the previous generation of MDmesh devices through its new M6

technology, which combines excellent R_DS(on)per area improvement with one of the

most effective switching behaviors available, as well as a user-friendly experience for

maximum end-application efficiency.

Product status link

STD18N60M6

Product summary

Order code

STD18N60M6

Marking

Package

Packing

18N60M6

DPAK

Tape and reel

DS12843 - Rev 3 - April 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

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中文翻译

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