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STD1862O PDF预览

STD1862O

更新时间: 2024-09-27 13:14:07
品牌 Logo 应用领域
可天士 - KODENSHI 晶体小信号双极晶体管
页数 文件大小 规格书
4页 225K
描述
Small Signal Bipolar Transistor, 2A I(C), NPN,

STD1862O 数据手册

 浏览型号STD1862O的Datasheet PDF文件第2页浏览型号STD1862O的Datasheet PDF文件第3页浏览型号STD1862O的Datasheet PDF文件第4页 
STD1862  
NPN Silicon Transistor  
Descriptions  
Audio power amplifier  
PIN Connection  
C
High current application  
B
Features  
High current : IC=2A  
Complementary pair with STB1277  
E
TO-92  
Ordering Information  
Type NO.  
Marking  
Package Code  
TO-92  
STD1862  
STD1862  
Absolute maximum ratings  
Characteristic  
(Ta=25°C)  
Symbol  
Ratings  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
30  
30  
V
V
5
V
2
A
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
500  
150  
-55~150  
mW  
°C  
°C  
Tj  
Tstg  
Electrical Characteristics  
Characteristic  
(Ta=25°C)  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
IC=100μA, IE=0  
IC=10mA, IB=0  
IE=1mA, IC=0  
30  
-
-
V
30  
-
-
-
V
5
-
V
VCB=30V, IE=0  
-
-
100  
100  
320  
1
nA  
nA  
-
Emitter cut-off current  
IEBO  
VEB=5V, IC=0  
-
-
*
DC current gain  
hFE  
VCE=2V, IC=500mA  
VCE=2V, IC=500mA  
IC=2A, IB=0.2A  
VCB=5V, IC=50mA  
VCB=10V, IE=0, f=1MHz  
100  
-
Base-Emitter on voltage  
VBE(on)  
VCE(sat)  
fT  
-
-
-
-
-
V
Collector-Emitter saturation voltage  
Transition frequency  
-
0.8  
-
V
170  
48  
MHz  
pF  
Collector output capacitance  
Cob  
-
*
: hFE rank / O : 100~200, Y : 160~320  
KSD-T0A023-001  
1

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