Datasheet > STD16N65M2

STD16N65M2

更新时间： 2023-12-20 18:46:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	781K
描述
N沟道650 V、0.32 Ohm典型值、11 A MDmesh M2功率MOSFET，DPAK封装

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STD16N65M2 数据手册

STD16N65M2

Datasheet

N-channel 650 V, 320 mΩ typ., 11 A MDmesh M2 Power MOSFET

in a DPAK package

Features

TAB

at T max.

DS(on)

max.

Order code

STD16N65M2

710 V

360 mΩ

11 A

•

Extremely low gate charge

DPAK

Excellent output capacitance (C_oss) profile

100% avalanche tested

D(2, TAB)

Zener-protected

Applications

G(1)

•

Switching applications

Description

S(3)

AM01476v1_tab

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

Product status link

STD16N65M2

Product summary

Order code

STD16N65M2

Marking

Package

Packing

16N65M2

DPAK

Tape and reel

DS10675 - Rev 2 - May 2023

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...17

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