Datasheet > STD130N4F6AG

STD130N4F6AG

更新时间： 2024-11-08 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	805K
描述
汽车级N沟道40 V、3.0 mOhm典型值、80 A STripFET F6功率MOSFET，DPAK封装

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STD130N4F6AG 数据手册

STD130N4F6AG

Automotive-grade N-channel 40 V, 3.0 mΩ typ., 80 A

STripFET™ F6 Power MOSFET in a DPAK package

Datasheet production data

Features

V_DS

R_DS(on)max.

I_D

Order code

7$%

STD130N4F6AG

40 V

3.6 mΩ

80 A

• Designed for automotive applications and

ꢁ

AEC-Q101 qualified

ꢂ

• Very low on-resistance

• Very low gate charge

ꢀ

• High avalanche ruggedness

• Low gate drive power loss

'3$.

Applications

Figure 1. Internal schematic diagram

• Switching applications

'ꢇꢂꢈꢉ7$%ꢊ

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

*ꢇꢀꢊ

6ꢇꢁꢊ

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Table 1. Device summary

Order code

Marking

130N4F6

Package

Packaging

STD130N4F6AG

DPAK

Tape and reel

February 2015

DocID027413 Rev 2

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

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