Datasheet > STD12N50DM2

STD12N50DM2

更新时间： 2024-11-30 14:58:03

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道500 V、0.299 Ohm典型值、11 A MDmesh DM2功率MOSFET，DPAK封装

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STD12N50DM2 数据手册

STD12N50DM2

N-channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2

Power MOSFET in a DPAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STD12N50DM2

500 V

0.350 Ω

11 A



Fast-recovery body diode

Extremely low gate charge and input

capacitance



Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Figure 1: Internal schematic diagram

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh DM2 fast recovery diode

series. It offers very low recovery charge and

time (Qrr, trr) combined with low R_DS(on)

rendering it suitable for the most demanding high

efficiency converters and ideal for bridge

topologies and ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STD12N50DM2

12N50DM2

DPAK

Tape and reel

March 2016

DocID026806 Rev 2

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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