Datasheet > STD12N10L

STD12N10L

更新时间： 2024-09-21 22:21:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
6页	48K
描述
N - CHANNEL 100V - 0.12 ohm - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR

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STD12N10L 数据手册

STD12N10L

N - CHANNEL 100V - 0.12 Ω - 12A TO-252

LOW THRESHOLD POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STD12N10L

100 V

< 0.15 Ω

12 A

■

TYPICAL R_DS(on)= 0.12 Ω

AVALANCHERUGGED TECHNOLOGY

100% AVALANCHE TESTED

HIGH CURRENT CAPABILITY

175 ^oC OPERATING TEMPERATURE

LOW THRESHOLD DRIVE

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DPAK

TO-252

(Suffix ”T4”)

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ENVIRONMENT(INJECTION,

ABS, AIR-BG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

100

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

100

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

_DM(• )

Drain Current (pulsed)

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.33

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/9

November 1999

12 3 4 5 6

中文翻译

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