Datasheet > STD12N06T4

STD12N06T4

更新时间： 2024-11-26 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	179K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 12A I(D) \| TO-252

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STD12N06T4 数据手册

STD12N05

STD12N06

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

STD12N05

STD12N06

V_DSS

50 V

60 V

R_DS(on)

I_D

< 0.15 Ω

12 A

■

TYPICAL R_DS(on)= 0.1 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

APPLICATION ORIENTED

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

CHARACTERIZATION

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STD12N05

STD12N06

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

± 20

I_D

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.3

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

December 1996

12 3 4 5 6 7...10

中文翻译

下载PDF

与STD12N06T4相关器件

型号	品牌	获取价格	描述	数据表
STD12N10L	STMICROELECTRONICS	获取价格	N - CHANNEL 100V - 0.12 ohm - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR
STD12N10LT4	STMICROELECTRONICS	获取价格	12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
STD12N50DM2	STMICROELECTRONICS	获取价格	N沟道500 V、0.299 Ohm典型值、11 A MDmesh DM2功率MOSFET
STD12N50M2	STMICROELECTRONICS	获取价格	N沟道500 V、0.325 Ohm典型值、10 A MDmesh M2功率MOSFET，
STD12N60DM2AG	STMICROELECTRONICS	获取价格	汽车级N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOS
STD12N60DM6	STMICROELECTRONICS	获取价格	N-channel 600 V, 345 mOhm typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package
STD12N60M2	STMICROELECTRONICS	获取价格	N沟道600 V、0.395 Ohm典型值、9 A MDmesh M2功率MOSFET，D
STD12N60M6	STMICROELECTRONICS	获取价格	N-channel 600 V, 0.29 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package
STD12N65M2	STMICROELECTRONICS	获取价格	N沟道650 V、0.42 Ohm典型值、8 A MDmesh M2功率MOSFET，DP
STD12N65M5	STMICROELECTRONICS	获取价格	N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK