STD12N05

更新时间： 2024-11-01 22:21:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	179K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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中文翻译

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数据手册

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STD12N05 数据手册

STD12N05

STD12N06

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

STD12N05

STD12N06

V_DSS

50 V

60 V

R_DS(on)

I_D

< 0.15 Ω

12 A

■

TYPICAL R_DS(on)= 0.1 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

APPLICATION ORIENTED

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

CHARACTERIZATION

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STD12N05

STD12N06

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

± 20

I_D

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.3

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

December 1996

12 3 4 5 6 7...10

中文翻译

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与STD12N05相关器件

型号	品牌	获取价格	描述	数据表
STD12N05-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 12A I(D) \| TO-251
STD12N05L	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD12N05L-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 12A I(D) \| TO-251
STD12N05LT4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 12A I(D) \| TO-252
STD12N05T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 12A I(D) \| TO-252
STD12N06	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STD12N06-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 12A I(D) \| TO-251
STD12N06L	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD12N06L-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 12A I(D) \| TO-251
STD12N06LT4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 12A I(D) \| TO-252