Datasheet > STD123S

STD123S

更新时间： 2023-12-06 20:10:48

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	707K
描述
SOT-23

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中文翻译

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数据手册

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STD123S 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

STD123S

TRANSISTOR (NPN)

SOT-23

FEATURES

Low saturation medium current application

Extremely low collector saturation voltage

1. BASE

2. EMITTER

Suitable for low voltage large current drivers

High DC current gain and large current capability

Low on resistance : R_ON=0.6Ω(Max.) (I_B=1mA)

3. COLLECTOR

Marking:123

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

6.5

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

350

357

℃/W

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V _{(BR) CBO}

V _{(BR) CEO}

V _{(BR) EBO}

I_CBO

Test conditions

I_C=50μA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA, I_B=0

6.5

I_E= 50μA, I_C=0

V_CB= 20 V, I_E=0

V_EB= 6V, I_C=0

0.1

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=1V, I_C= 100mA

I_C=500mA, I_B= 50mA

150

Collector-emitter saturation voltage

V_CE(sat)

0.3

Transition frequency

_CE=5V, I_C=50mA

260

MHz

f_T

Collector output capacitance

Cob

V_CB=10V, I_E=0, f=1MHz

f=1KHz,I_B=1mA,

V_IN=0.3V

On resistance

R_ON

0.6

Ω

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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