Datasheet > STD123S

STD123S

更新时间： 2024-09-21 12:20:39

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描述
TRANSISTOR(NPN)

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STD123S 数据手册

STD123S

TRANSISTOR(NPN)

SOT-23

FEATURES

Low saturation medium current application

1. BASE

Extremely low collector saturation voltage

Suitable for low voltage large current drivers

High DC current gain and large current capability

Low on resistance : R_ON=0.6Ω(Max.) (I_B=1mA)

2. EMITTER

3. COLLECTOR

Marking:123

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

6.5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

350

150

-55-150

T_j

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V _{(BR) CBO}

V _{(BR) CEO}

V _{(BR) EBO}

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=50μA, I_E=0

I_C=1mA, I_B=0

6.5

I_E= 50μA, I_C=0

V_CB= 20 V, I_E=0

V_EB= 6V, I_C=0

0.1

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=1V, I_C= 100mA

I_C=500mA, I_B= 50mA

150

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

0.3

V_CE=5V, I_C=50mA

260

MHz

Collector output capacitance

Cob

V_CB=10V, I_E=0, f=1MHz

f=1KHz,I_B=1mA,

V_IN=0.3V

On resistance

R_ON

0.6

Ω

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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