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STD11NM60ND_10 PDF预览

STD11NM60ND_10

更新时间: 2022-12-26 07:50:54
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 753K
描述
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STD11NM60ND_10 数据手册

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STD11NM60ND, STF/I11NM60ND  
STP11NM60ND, STU11NM60ND  
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET  
I2PAK, TO-220, TO-220FP, IPAK, DPAK  
Features  
Order codes VDSS (@Tjmax) RDS(on) max  
ID  
3
3
2
STD11NM60ND  
STF11NM60ND  
STI11NM60ND  
STP11NM60ND  
STU11NM60ND  
10 A  
10 A(1)  
10 A  
1
1
DPAK  
PAK  
650 V  
< 0.45 Ω  
3
2
10 A  
1
10 A  
IPAK  
1. Limited only by maximum temperature allowed  
3
3
2
2
The worldwide best R  
* area amongst the  
1
1
DS(on)  
fast recovery diode devices  
TO-220FP  
TO-220  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Extremely high dv/dt and avalanche  
capabilities  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
$ꢅꢆꢇ  
Description  
The device is an N-channel FDmesh™ II Power  
MOSFET that belongs to the second generation  
of MDmesh™ technology. This revolutionary  
Power MOSFET associates a new vertical  
structure to the company's strip layout and  
associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.It is therefore strongly  
recommended for bridge topologies, in particular  
ZVS phase-shift converters.  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
Packaging  
STD11NM60ND  
STF11NM60ND  
STI11NM60ND  
STP11NM60ND  
STU11NM60ND  
Tape and reel  
Tube  
TO-220FP  
I2PAK  
11NM60ND  
Tube  
TO-220  
IPAK  
Tube  
Tube  
October 2010  
Doc ID 14625 Rev 2  
1/19  
www.st.com  
19  

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