STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET
I2PAK, TO-220, TO-220FP, IPAK, DPAK
Features
Order codes VDSS (@Tjmax) RDS(on) max
ID
3
3
2
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
10 A
10 A(1)
10 A
1
1
DPAK
I²PAK
650 V
< 0.45 Ω
3
2
10 A
1
10 A
IPAK
1. Limited only by maximum temperature allowed
3
3
2
2
■ The worldwide best R
* area amongst the
1
1
DS(on)
fast recovery diode devices
TO-220FP
TO-220
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Figure 1.
Internal schematic diagram
Application
Switching applications
$ꢅꢆꢇ
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
'ꢅꢁꢇ
3ꢅꢈꢇ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Package
DPAK
Packaging
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
Tape and reel
Tube
TO-220FP
I2PAK
11NM60ND
Tube
TO-220
IPAK
Tube
Tube
October 2010
Doc ID 14625 Rev 2
1/19
www.st.com
19