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STD11NM60N-1_08 PDF预览

STD11NM60N-1_08

更新时间: 2024-02-11 11:29:13
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
21页 624K
描述
N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh⑩ Power MOSFET

STD11NM60N-1_08 数据手册

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STD11NM60N-1 - STB11NM60N/-1  
STD11NM60N-STP11NM60N-STF11NM60N  
N-channel 600 V - 0.37 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK  
DPAK - D2PAK second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@TJmax)  
RDS(on)  
max  
3
Type  
ID  
3
2
3
1
1
2
1
STB11NM60N-1  
STB11NM60N  
STD11NM60N  
STD11NM60N-1  
STF11NM60N  
STP11NM60N  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
0.45 Ω  
0.45 Ω  
0.45 Ω  
0.45 Ω  
0.45 Ω  
0.45 Ω  
10 A  
10 A  
DPAK  
TO-220  
IPAK  
10 A  
10 A  
10 A(1)  
10 A  
3
3
3
2
2
1
1
1
1. Limited only by maximum temperature allowed  
PAK  
TO-220FP  
PAK  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is designed using the  
second generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB11NM60N-1  
STB11NM60N  
STD11NM60N-1  
STD11NM60N  
STP11NM60N  
STF11NM60N  
B11NM60N  
11NM60N  
PAK  
PAK  
IPAK  
Tube  
Tape and reel  
Tube  
D11NM60N  
D11NM60N  
P11NM60N  
F11NM60N  
DPAK  
Tape and reel  
Tube  
TO-220  
TO-220FP  
Tube  
March 2008  
Rev 4  
1/21  
www.st.com  
21  

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