Datasheet > STC945L

STC945L

更新时间： 2024-01-29 20:52:15

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
4页	225K
描述
Small Signal Bipolar Transistor,

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技术参数
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STC945L 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Base Number Matches：	1

STC945L 数据手册

STC945

NPN Silicon Transistor

Description

• General small signal amplifier

PIN Connection

Features

• Low collector saturation voltage

: V_CE(sat)=0.25V(Max.)

• Low output capacitance : C_ob=2pF(Typ.)

• Complementary pair with STA733

TO-92

Ordering Information

Type NO.

Marking

Package Code

STC945

TO-92

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

V_CBO

V_CEO

V_EBO

I_C

150

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

500

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

(Ta=25°C)

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

I_C=50μA, I_E=0

I_C=1mA, I_B=0

I_E=50μA, I_C=0

V_CB=50V, I_E=0

0.1

700

0.25

μA

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

DC current gain

V_CE=6V, I_C=2mA

I_C=100mA, I_B=10mA

V_CE=10V, I_C=1mA

V_CB=10V, I_E=0, f=1MHz

h_FE

Collector-Emitter saturation voltage

Transistion frequency

V_CE(sat)

f_T

MHz

Collector output capacitance

C_ob

3.5

V_CE=6V, I_C=0.1mA,

f=1KHz, Rg=10KΩ

Noise figure

* : h_FErank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700

KSD-T0A022-001

12 3 4

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