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STC945 PDF预览

STC945

更新时间: 2024-09-23 09:01:11
品牌 Logo 应用领域
可天士 - KODENSHI 晶体晶体管
页数 文件大小 规格书
4页 226K
描述
NPN Silicon Transistor

STC945 数据手册

 浏览型号STC945的Datasheet PDF文件第2页浏览型号STC945的Datasheet PDF文件第3页浏览型号STC945的Datasheet PDF文件第4页 
STC945  
NPN Silicon Transistor  
Description  
General small signal amplifier  
PIN Connection  
C
E
Features  
B
Low collector saturation voltage  
: VCE(sat)=0.25V(Max.)  
Low output capacitance : Cob=2pF(Typ.)  
Complementary pair with STA733  
TO-92  
Ordering Information  
Type NO.  
Marking  
Package Code  
STC945  
STC945  
TO-92  
Absolute maximum ratings  
Characteristic  
(Ta=25°C)  
Symbol  
Ratings  
50  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
V
V
40  
5
V
150  
mA  
mW  
°C  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
500  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
(Ta=25°C)  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
IC=50μA, IE=0  
50  
40  
5
-
-
-
-
-
-
-
-
2
-
V
IC=1mA, IB=0  
-
V
IE=50μA, IC=0  
-
V
VCB=50V, IE=0  
-
0.1  
0.1  
700  
0.25  
-
μA  
μA  
-
Emitter cut-off current  
IEBO  
VEB=5V, IC=0  
-
*
DC current gain  
VCE=6V, IC=2mA  
IC=100mA, IB=10mA  
VCE=10V, IC=1mA  
VCB=10V, IE=0, f=1MHz  
70  
-
hFE  
Collector-Emitter saturation voltage  
Transistion frequency  
VCE(sat)  
fT  
V
80  
-
MHz  
pF  
Collector output capacitance  
Cob  
3.5  
VCE=6V, IC=0.1mA,  
f=1KHz, Rg=10KΩ  
Noise figure  
NF  
-
-
10  
dB  
* : hFE rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700  
KSD-T0A022-001  
1

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