STC945
NPN Silicon Transistor
Description
• General small signal amplifier
PIN Connection
C
E
Features
B
• Low collector saturation voltage
: VCE(sat)=0.25V(Max.)
• Low output capacitance : Cob=2pF(Typ.)
• Complementary pair with STA733
TO-92
Ordering Information
Type NO.
Marking
Package Code
STC945
STC945
TO-92
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
Ratings
50
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
VCBO
VCEO
VEBO
IC
V
V
40
5
V
150
mA
mW
°C
Collector dissipation
Junction temperature
Storage temperature
PC
500
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
IC=50μA, IE=0
50
40
5
-
-
-
-
-
-
-
-
2
-
V
IC=1mA, IB=0
-
V
IE=50μA, IC=0
-
V
VCB=50V, IE=0
-
0.1
0.1
700
0.25
-
μA
μA
-
Emitter cut-off current
IEBO
VEB=5V, IC=0
-
*
DC current gain
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
70
-
hFE
Collector-Emitter saturation voltage
Transistion frequency
VCE(sat)
fT
V
80
-
MHz
pF
Collector output capacitance
Cob
3.5
VCE=6V, IC=0.1mA,
f=1KHz, Rg=10KΩ
Noise figure
NF
-
-
10
dB
* : hFE rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700
KSD-T0A022-001
1