Datasheet > STC6614

STC6614

更新时间： 2024-09-21 17:15:27

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
8页	1175K
描述
SOP-8P

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数据手册

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STC6614 数据手册

STC6614

N&P Pair Enhancement Mode MOSFET

7.0A / ꢀ5.0A

DESCRIPTION

The STC6614 is the N & PꢀChannel enhancement mode power field effect transistor using high cell density

DMOS trench technology. This high density process is especially tailored to minimize onꢀstate resistance

and provide superior switching performance. This device is particularly suited for low voltage application

such as notebook computer power management and other battery powered circuits, where highꢀside

switching, low inꢀline power loss and resistance to transient are needed.

FEATURE

PIN CONFIGURATION

SOP-8

N-Channel

ꢀ

60V/7.0A, RDS(ON) = 35mꢁ(Typ.)

@VGS = 10V

60V/4.0A, RDS(ON) = 40mꢁ

@V^GS= 4.5V

ꢀ

P-Channel

ꢀ

ꢀ60V/ꢀ5.0A, RDS(ON) = 60mꢁ(Typ.)

@VGS = ꢀ10V

ꢀ60V/ꢀ3.0A, RDS(ON)= 80mꢁ

@VGS = ꢀ4.5V

ꢀ

Super high density cell design for

extremely low RDS(ON)

Exceptional onꢀresistance and maximum

DC current capability

PART MARKING

SOPꢀ8 package

Y∶Year

A∶Product Code

Q︰Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STC6614 2010. V1

12 3 4 5 6 7 8

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