Datasheet > STC6602ST6RG

STC6602ST6RG

更新时间： 2024-09-21 01:17:15

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
8页	873K
描述
Dual N&P Channel Enhancement Mode MOSFET

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STC6602ST6RG 数据手册

STC6602

Dual N&P Channel Enhancement Mode

MOSFET

2.8A/-2.8A

DESCRIPTION

The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application, such as notebook computer power management and

other battery powered circuits, where high-side switching is required.

FEATURE

PIN CONFIGURATION

TSOP-6

S1 D2

02YW

S2 G2

Y: Year

A: Week Code

ORDERING INFORMATION

Part Number

Package

Part Marking

STC6602ST6RG

TSOP-6

02YW

※ Week Code Code : A ~ Z ; a ~ z

※ STC6602ST6RG

ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STC6602 2007. V1

12 3 4 5 6 7 8

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