Datasheet > STC5551F

STC5551F

更新时间： 2024-11-19 09:01:15

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
6页	318K
描述
NPN Silicon Transistor

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中文翻译

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数据手册

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STC5551F 数据手册

STC5551F

NPN Silicon Transistor

PIN Connection

Descriptions

• General purpose amplifier

• High voltage application

Features

• High collector breakdown voltage

: V_CBO= 180V, V_CEO= 160V

• Low collector saturation voltage

: V_CE(sat)=0.5V(MAX.)

SOT-89

Ordering Information

Type No.

Marking

Package Code

N51

□YWW

STC5551F

SOT-89

N51: DEVICE CODE, □ : h_FErank, YWW(Y : Year code, WW : Weekly code)

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

V_CBO

V_CEO

V_EBO

I_C

180

160

Collector-Emitter voltage

Emitter-Base voltage

0.6

A(DC)

Collector current

I_CP*

P_C

1.2

A(Pulse)

0.5

Collector power dissipation

Junction temperature

P_C

T_J

150

-55~150

°C

Storage temperature

T_stg

* : Single pulse, tp= 300 ㎲

** : When mounted on ceramic substrate(250 ㎟×0.8t)

KSD-T5B012-003

12 3 4 5 6

中文翻译

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