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STC4539S8RG PDF预览

STC4539S8RG

更新时间: 2024-11-27 01:15:07
品牌 Logo 应用领域
司坦森 - STANSON /
页数 文件大小 规格书
10页 454K
描述
N&P Pair Enhancement Mode MOSFET

STC4539S8RG 数据手册

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STC4539  
N&P Pair Enhancement Mode MOSFET  
6.8A / -6.2A  
DESCRIPTION  
The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density  
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance  
and provide superior switching performance. This device is particularly suited for low voltage application  
such as notebook computer power management and other battery powered circuits, where high-side  
switching, low in-line power loss and resistance to transient are needed.  
PIN CONFIGURATION  
SOP-8  
FEATURE  
N-Channel  
z
30V/6.8A, RDS(ON) = 34mΩ  
@VGS = 10V  
30V/5.6A, RDS(ON) = 46mΩ  
@VGS = 4.5V  
z
P-Channel  
z
z
z
z
z
-30V/-6.2A, RDS(ON) = 60mΩ  
@VGS = -10V  
-30V/-4.6A, RDS(ON)= 80mΩ  
@VGS = - 4.5V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional on-resistance and maximum  
DC current capability  
SOP-8 package  
PART MARKING  
SOP-8  
ORDERING INFORMATION  
Part Number  
Package  
SOP-8  
Part Marking  
STC4539  
STC4539S8RG  
STC4539S8TG  
SOP-8  
STC4539  
Process Code : A ~ Z ; a ~ z  
STC4539S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free  
STC4539S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
Copyright © 2007, Stanson Corp.  
STC4539 2007. V1  

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