Datasheet > STC4516S8RG

STC4516S8RG

更新时间： 2024-11-26 06:14:35

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
9页	962K
描述
Complementary Dual Enhancement Mode MOSFET

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STC4516S8RG 数据手册

STC4516

Complementary Dual Enhancement Mode MOSFET

8.5A for N Channel / -7.2A for P Channl

DESCRIPTION

STC4516 is the complementary enhancement mode power field effect transistor using

high cell density, DMOS trench technology. This high density process is especially

tailored to minimize on-state resistance.

PIN CONFIGURATION

SOP-8

FEATURE

P Channel

Top View

-30V/-7.2A, R_DS(ON)= 22m-ohm (Typ.)

@V^GS=-10V

-30V/-5.6A, R_DS(ON)= 40m-ohm

@V^GS=-4.5V

N Channel

30V/8.5A, R_DS(ON)= 10m-ohm

@V^GS=10V

30V/7.8A, R_DS(ON)= 16m-ohm

@V^GS=4.5V

Super high density cell design for extremely

low R_DS(ON)

SOP-8 package design

D1 D2 D2

STC5416

S1 G1 S2

Y: Year Code A: Process Code

N-Channel MOSFET

P-Channel MOSFET

ORDERING INFORMATION

Part Number

Package

Part Marking

STC4516S8RG

SOP-8

STC4516

STC4516S8TG

※ Process Code : A ~ Z ; a ~ z

※ STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free

※ STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STC4516 2008 V1

12 3 4 5 6 7...9

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