Datasheet > STC411

STC411

更新时间： 2024-11-26 09:01:15

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
5页	311K
描述
NPN Silicon Transistor

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数据手册

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STC411 数据手册

STC411

NPN Silicon Transistor

Description

• General purpose amplifier

PIN Connection

• High voltage application

Features

• Low saturation switching application

• Voltage regulator application

• Low saturation : V_CE(SAT)=0.4V Max.

• High Voltage : V_CEO=60V Min.

TO-92

Ordering Information

Type NO.

Marking

Package Code

STC411

TO-92

Absolute maximum ratings

Characteristic

Collector-Base voltage

Collector-Emitter voltage

Emitter-base voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

A(DC)

Collector current

I_CP*

P_C

A(Pulse)

°C

Collector dissipation

Junction temperature

Storage temperature

* : Single pulse, tp= 300 ㎲

500

150

-55~150

T_j

T_stg

°C

Electrical Characteristics

Characteristic

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

I_C=100 ㎂, I_E=0

I_C=1mA, I_B=0

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

I_E=10mA, I_C=0

V_CB=60V, I_E=0

0.1

μA

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

0.1

400

V_CE=2V, I_C=100mA

V_CE=2V, I_C=1A

200

DC current gain

h_FE*

Base-Emitter on voltage

Collector-Emitter saturation voltage

Collector output capacitance

Transition frequency

V_BE(ON)

V_CE(sat)

C_ob

V_CE=2V, I_C=500mA

I_C=500mA, I_B=50mA

V_CB=10V, I_E=0, f=1MHz

V_CB=10V, I_C=50mA

1.2

0.4

160

f_T

MHz

* h_FErank : 200~400 Only

KSD-T0A032-000

12 3 4 5

中文翻译

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