Datasheet > STC4073F

STC4073F

更新时间： 2024-11-26 12:20:23

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
6页	413K
描述
NPN Silicon Transistor

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中文翻译

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STC4073F 数据手册

STC4073F

NPN Silicon Transistor

Descriptions

• General purpose amplifier

PIN Connection

• High voltage application

Features

• High collector breakdown voltage

: V_CEO= 120V

• Low collector saturation voltage

: V_CE(sat)=0.5V(MAX.)

• “Green” device and RoHS compliant device

• Available in full lead (Pb)-free device

SOT-89

Ordering Information

Type No.

Marking

Package Code

M73

□YWW

STC4073F

SOT-89

M73: DEVICE CODE, □ : h_FErank, YWW(Y : Year code, WW : Weekly code)

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base voltage

120

Collector-Emitter voltage

Emitter-Base voltage

120

A(DC)

Collector current

I_CP*

P_C

0.5

A(Pulse)

Collector power dissipation

P_C

Junction temperature

Storage temperature

T_J

150

°C

T_stg

-55~150

Characteristic

Symbol

Typ.

Max

250.0

125.0

Unit

R_th(J-A)

℃/W

Thermal resistance Junction-ambient

R_th(J-A)

* : Single pulse, tp= 300 ㎲

** : When mounted on ceramic substrate(250 ㎟×0.8t)

KSD-T5B017-004

12 3 4 5 6

中文翻译

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