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STB75N20 PDF预览

STB75N20

更新时间: 2024-01-12 18:07:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极
页数 文件大小 规格书
16页 505K
描述
N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET? Power MOSFET

STB75N20 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.8
雪崩能效等级(Eas):205 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.034 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON

STB75N20 数据手册

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STB75N20  
STP75N20 - STW75N20  
N-channel 200V - 0.028- 75A - D2PAK - TO-220 - TO-247  
Low gate charge STripFET™ Power MOSFET  
General features  
Type  
VDSS  
200V  
200V  
200V  
RDS(on)  
<0.034  
<0.034Ω  
<0.034Ω  
ID  
STB75N20  
STP75N20  
STW75N20  
75A  
75A  
75A  
3
1
PAK  
TO-247  
Exceptional dv/dt capability  
Low gate charge  
3
2
1
100% Avalanche tested  
TO-220  
Description  
This Power MOSFET series realized with  
Internal schematic diagram  
STMicroelectronics unique STripFET™ process  
has specifically been designed to minimize input  
capacitance and gate charge. It is therefore  
suitable as primary switch in advanced high-  
efficiency isolated DC-DC converters  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB75N20T4  
STP75N20  
STW75N20  
B75N20  
P75N20  
W75N20  
PAK  
TO-220  
TO-247  
Tape & reel  
Tube  
Tube  
July 2006  
Rev 4  
1/16  
www.st.com  
16  

STB75N20 替代型号

型号 品牌 替代类型 描述 数据表
STB75NF20 STMICROELECTRONICS

类似代替

N-channel 200V - 0.028ヘ - 75A - D2PAK - TO-22
STB75N20T4 STMICROELECTRONICS

功能相似

N-channel 200V - 0.028Ω - 75A - D2PAK - TO-22

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