Datasheet > STB16N80K5

STB16N80K5

更新时间： 2024-09-18 20:09:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	557K
描述
Power Field-Effect Transistor

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STB16N80K5 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

STB16N80K5 数据手册

STB16N80K5

N-channel 800 V, 0.29 Ω typ.,14 A MDmesh™ K5

Power MOSFET in a D²PAK package

Datasheet

target specification

Features

Order code

V_DS

R_DS(on)max.

I_D

7$%

STB16N80K5

800 V

0.34 Ω

14 A

• Outstanding R_DS(on)*area

• Industry’s best figure of merit (FoM)

• Ultra low-gate charge

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• 100% avalanche tested

• Zener-protected

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' 3$.

Applications

• Switching applications

Figure 1. Internal schematic diagram

Description

'ꢂꢃꢄꢅ7$%ꢆ

This very high voltage N-channel Power MOSFET

is designed using MDmesh™ K5 technology

based on an innovative proprietary vertical

structure. The result is a dramatic reduction in on-

resistance and ultra-low gate charge for

applications requiring superior power density and

high efficiency.

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Table 1. Device summary

Order code

Marking

16N80K5

Package

Packing

STB16N80K5

D²PAK

Tape and Reel

March 2015

DocID027617 Rev 1

1/13

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

www.st.com

12 3 4 5 6 7...13

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