Datasheet > STB160NF03LT4

STB160NF03LT4

更新时间： 2024-11-06 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	155K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 160A I(D) \| TO-263AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STB160NF03LT4 数据手册

STB160NF03L

N-CHANNEL 30V - 0.0021

Ω - 160A D2PAK

STripFET POWER MOSFET

TYPE

DSS

DS(on)

STB160NF03L

30 V

< 0.0030 Ω

160 A

■

TYPICAL R (on) = 0.0021Ω

LOW THRESHOLD DRIVE

ULTRA LOW ON-RESISTANCE

VERY LOW GATE CHARGE

100% AVALANCHE TESTED

DESCRIPTION

D PAK

This Power MOSFET is the latest development of

STMicroelectronics unique “Single Feature

Size ” strip-based process. The resulting tran-

sistor shows extremely high packing density with

ultra low on-resistance, superior switching charac-

teristics and less critical alignment steps therefore

a remarkable manufacturing reproducibility. This

device is particularly suitable for high current, low

voltage switching application where efficiency is

crucial.

(TO-263)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

BUCK CONVERTERS IN HIGH

PERFORMANCE TELECOM AND VRMs

DC-DC CONVERTERS

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

±15

160

113

I (1)

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(●)

Drain Current (pulsed)

640

300

Total Dissipation at T = 25°C

W/°C

TOT

Derating Factor

(2)

Single Pulse Avalanche Energy

Storage Temperature

–65 to 175

175

°C

stg

Max. Operating Junction Temperature

(●) Pulse width limited by safe operating area

(1) Limited by Package

(2) I ≤100A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

j JMAX.

(BR)DSS

February 2001

1/9

12 3 4 5 6 7...9

中文翻译

下载PDF

与STB160NF03LT4相关器件

型号	品牌	获取价格	描述	数据表
STB160NF3LL	STMICROELECTRONICS	获取价格	N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STrip
STB160NF3LL_06	STMICROELECTRONICS	获取价格	N-channel 30V - 0.0028ohm - 160A - D2PAK STripFET TM III Power MOSFET
STB16N65M5	STMICROELECTRONICS	获取价格	N-channel 650 V, 0.230 Ω, 12 A MDmesh? V Powe
STB16N80K5	STMICROELECTRONICS	获取价格	Power Field-Effect Transistor
STB16N90K5	STMICROELECTRONICS	获取价格	N沟道900 V、280 mOhm典型值、15 A MDmesh K5功率MOSFET，D
STB16NB25	STMICROELECTRONICS	获取价格	N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET
STB16NB25T4	STMICROELECTRONICS	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 7A I(D) \| TO-263AB
STB16NF06L	STMICROELECTRONICS	获取价格	N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET
STB16NF06L_06	STMICROELECTRONICS	获取价格	N-channel 60V - 0.07Ω - 16A - D2PAK STripFET™
STB16NF06LT4	STMICROELECTRONICS	获取价格	N-channel 60V - 0.07Î© - 16A - D2PAK STripFET