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STB11NM60N PDF预览

STB11NM60N

更新时间: 2024-02-24 23:16:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
21页 624K
描述
N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh⑩ Power MOSFET

STB11NM60N 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknown风险等级:5.75
雪崩能效等级(Eas):200 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A最大漏源导通电阻:0.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):90 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB11NM60N 数据手册

 浏览型号STB11NM60N的Datasheet PDF文件第2页浏览型号STB11NM60N的Datasheet PDF文件第3页浏览型号STB11NM60N的Datasheet PDF文件第4页浏览型号STB11NM60N的Datasheet PDF文件第5页浏览型号STB11NM60N的Datasheet PDF文件第6页浏览型号STB11NM60N的Datasheet PDF文件第7页 
STD11NM60N-1 - STB11NM60N/-1  
STD11NM60N-STP11NM60N-STF11NM60N  
N-channel 600 V - 0.37 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK  
DPAK - D2PAK second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@TJmax)  
RDS(on)  
max  
3
Type  
ID  
3
2
3
1
1
2
1
STB11NM60N-1  
STB11NM60N  
STD11NM60N  
STD11NM60N-1  
STF11NM60N  
STP11NM60N  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
0.45 Ω  
0.45 Ω  
0.45 Ω  
0.45 Ω  
0.45 Ω  
0.45 Ω  
10 A  
10 A  
DPAK  
TO-220  
IPAK  
10 A  
10 A  
10 A(1)  
10 A  
3
3
3
2
2
1
1
1
1. Limited only by maximum temperature allowed  
PAK  
TO-220FP  
PAK  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is designed using the  
second generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB11NM60N-1  
STB11NM60N  
STD11NM60N-1  
STD11NM60N  
STP11NM60N  
STF11NM60N  
B11NM60N  
11NM60N  
PAK  
PAK  
IPAK  
Tube  
Tape and reel  
Tube  
D11NM60N  
D11NM60N  
P11NM60N  
F11NM60N  
DPAK  
Tape and reel  
Tube  
TO-220  
TO-220FP  
Tube  
March 2008  
Rev 4  
1/21  
www.st.com  
21  

STB11NM60N 替代型号

型号 品牌 替代类型 描述 数据表
STD11NM60ND STMICROELECTRONICS

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