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SXH-189 PDF预览

SXH-189

更新时间: 2024-02-24 14:12:49
品牌 Logo 应用领域
STANFORD 放大器射频微波
页数 文件大小 规格书
6页 282K
描述
5-2000 MHz Medium Power GaAsHBT Amplifier

SXH-189 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.82Is Samacsys:N
其他特性:HIGH RELIABILITY特性阻抗:50 Ω
构造:COMPONENT增益:17.5 dB
最大输入功率 (CW):20 dBm最大工作频率:2000 MHz
最小工作频率:5 MHz最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:WIDE BAND MEDIUM POWER
最大电压驻波比:1.9Base Number Matches:1

SXH-189 数据手册

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Preliminary  
Product Description  
SXH-189  
5-2000 MHz Medium Power  
GaAsHBT Amplifier  
Stanford Microdevices’ SXH-189 amplifier is a high efficiency  
GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed  
in low-cost surface-mountable plastic package. These HBT  
MMICs are fabricated using molecular beam epitaxial growth  
technology which produces reliable and consistent  
performance from wafer to wafer and lot to lot.  
These amplifiers are specially designed for use as driver  
devices for infrastructure equipment in the 5-2000 MHz cellular,  
ISM, WLL and narrowband PCS applications.  
Product Features  
Patented High Reliability GaAs HBT Technology  
Its high linearity makes it an ideal choice for multi-carrier as  
well as digital applications.  
High 3rd Order Intercept : +39 dBm typ.  
at 1960 MHz  
Typical IP3, P1dB, Gain  
Surface-Mountable Power Plastic Package  
45  
IP3  
IP3  
40  
35  
30  
25  
20  
15  
10  
5
Applications  
PCS, Cellular Systems  
High Linearity IF Amplifiers  
P1dB  
P1dB  
Gain(dB)  
Gain(dB)  
0
850 MHz  
1960 MHz  
Parameters: Test Conditions:  
Z0 = 50 Ohms, Ta = 25C  
Symbol  
P1dB  
S21  
Units  
Min.  
Typ.  
Max.  
f = 850 MHz  
f =1960 MHz  
dBm  
dBm  
23.0  
23.0  
Output Power at 1dB Compression  
Small signal gain  
f = 850 MHz  
f =1960 MHz  
dB  
dB  
17.5  
19.5  
14.0  
f = 850 MHz  
f =1960 MHz  
1.5:1  
1.9:1  
S11  
Input VSWR  
-
f = 850 MHz  
f =1960 MHz  
dBm  
dBm  
39.0  
39.0  
IP3  
Third Order Intercept Point  
Noise Figure  
f = 850 MHz  
f =1960 MHz  
dB  
dB  
5.0  
5.0  
NF  
Vs = 8V  
Id  
Device Current  
Rbias = 27 ohms  
Vdevice 5V  
mA  
80  
100  
108  
130  
Rth, j-l  
Thermal Resitance (junction - lead)  
° C/W  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
1
http://www.stanfordmicro.com  
EDS-101247 Rev D  

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