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SSW308

更新时间: 2022-09-24 22:12:44
品牌 Logo 应用领域
STANFORD 开关光电二极管
页数 文件大小 规格书
2页 83K
描述
DC-3 GHz Low Cost GaAs MMIC SPDT Switch

SSW308 数据手册

 浏览型号SSW308的Datasheet PDF文件第2页 
Product Description  
SSW-308  
Stanford Microdevices’ SSW-308 is a high perfomance  
Gallium Arsenide Field Effect Transistor MMIC switch housed  
in a low-cost surface-mountable small outline plastic  
package.  
DC-3 GHz Low Cost  
GaAs MMIC SPDT Switch  
This single-pole, double-throw, reflective switch consumes  
less than 40uA and operates with 0V/-5V control voltages.  
This switch can be used in both analog and digital wireless  
communication systems including AMPS, PCS, DECT, and  
GSM.  
Typical output power at 1dB compression is +28dBm. 1dB  
output power over 1 watt may be achieved with higher  
control voltages.  
Product Features  
Fast Switching Speed : 3nsec  
HIgh LInearity : +47dBm IP3  
Ultra Low DC Power Consumption  
Low Insertion Loss : 0.7dB at 1GHz  
Low Cost Small Outline Plastic Package  
The die is fabricated using 0.5 micron FET process with gold  
metallization and silicon nitride passivation to achieve  
excellent performance and reliability.  
Isolation vs. Frequency  
VControl = -5 V  
-10  
-20  
-30  
-40  
-50  
dB  
Applications  
Digital Cellular  
Spread Spectrum  
DC  
1
2
3
GHz  
Electrical Specifications at Ta = 25C  
P a ra m e te rs : Te s t C o n d itio n s :  
S y m b o l  
U n its  
M in .  
Ty p .  
M a x .  
Z
0 = 5 0 o h m s  
In s  
In s e rtio n L o s s  
f = 0 .0 5 -1 .0 G H z  
f = 1 .0 0 -2 .0 G H z  
f = 1 .0 0 -3 .0 G H z  
d B  
d B  
d B  
0 .6  
0 .9  
1 .2  
0 .9  
1 .3  
Is o l  
Is o la tio n  
f = 0 .0 5 -1 .0 G H z  
f = 1 .0 0 -2 .0 G H z  
f = 1 .0 0 -3 .0 G H z  
d B  
d B  
d B  
2 0  
1 7  
2 5  
2 2  
1 6  
V S W R o n  
In p u t & O u tp u t V S W R  
(lo w lo s s s ta te )  
f = 0 .0 5 -1 .0 G H z  
f = 1 .0 0 -2 .0 G H z  
f = 1 .0 0 -3 .0 G H z  
-
-
-
1 .2 :1  
1 .4 :1  
1 .7 :1  
P 1 d B  
1 d B C o m p re s s io n a t 0 .5 -2 .0 G H z  
T h ird O rd e r In te rc e p t  
D e v ic e C u rre n t  
V
V
=
=
-8 V  
-5 V  
d B m  
d B m  
+ 3 1  
+ 2 8  
IP 3  
V
V
=
=
-8 V  
-5 V  
d B m  
d B m  
+ 5 0  
+ 4 7  
ID  
u A  
3 5  
3
Is w  
S w itc h in g S p e e d 5 0 % c o n tro l to  
1 0 % /9 0 % R F  
n s e c  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
7-21  

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