5秒后页面跳转
SSW224 PDF预览

SSW224

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
STANFORD 开关光电二极管分离技术隔离技术
页数 文件大小 规格书
3页 163K
描述
DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH

SSW224 数据手册

 浏览型号SSW224的Datasheet PDF文件第2页浏览型号SSW224的Datasheet PDF文件第3页 
Preliminary  
Preliminary  
Product Description  
Stanford Microdevices’ SSW-224 is a high perfomance  
Gallium Arsenide Field Effect Transistor MMIC switch  
housed in a low-cost surface-mountable 8-pin ceramic  
package.  
DC-6 GHz High Isolation  
SPDT GaAs MMIC Switch  
This single-pole, double-throw, reflective switch consumes  
less than 50uA and operates at -5V and 0V for control bias.  
Its high isolation and low insertion loss makes it ideal for T/R  
switching in analog and digital wireless communication  
systems.  
Product Features  
• High Isolation : 40dB at 2GHz, 30dB at 6GHz  
• Low DC Power Consumption  
The die is fabricated using 0.5 micron FET process with  
gold metallization and silicon nitride passivation to achieve  
excellent performance and reliability.  
• Broadband Performance - True DC Operation  
• Low Cost Surface-Mountable Ceramic Package  
Isolation vs. Frequency  
VControl = -5 V  
-20  
Applications  
-30  
-40  
• Analog/Digital Wireless System  
• Spread Spectrum  
• GPS  
dB  
-50  
-60  
-70  
DC  
1
2
3
4
5
6
GHz  
Electrical Specifications at Ta = 25C  
Symbol  
Parameters: Test Conditions: Zo=50ohms  
Units  
Min.  
Typ.  
Max.  
Ins  
Insertion Loss  
f = 0.05-2.0GHz  
f = 2.00-4.0GHz  
f = 4.05-6.0GHz  
dB  
dB  
dB  
0.7  
1.1  
1.5  
1.1  
1.5  
Isol  
Isolation  
f = 0.05-2.0GHz  
f = 2.00-4.0GHz  
f = 4.00-6.0GHz  
dB  
dB  
dB  
37  
30  
27  
47  
40  
35  
VSWR on  
Input & Output VSWR  
(on or low loss state)  
f = 0.05-2.0GHz  
f = 2.00-4.0GHz  
f = 4.00-6.0GHz  
1.15  
1.25  
1.50  
P1dB  
TOIP  
Output Power at 1dB Compression  
f= 0.5-6.0GHz  
V = -5V  
V = -8V  
dBm  
dBm  
+26  
+29  
Third Order Intercept Point  
f= 0.5-6.0GHz  
V = -5V  
V = -8V  
dBm  
dBm  
+45  
+48  
Id  
Device Current  
uA  
40  
3
Isw  
Switching Speed  
nsec  
50% control to 10%/90%RF  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
1
http://www.stanfordmicro.com  
EDS-101423 Rev A  

与SSW224相关器件

型号 品牌 描述 获取价格 数据表
SSW-224 STANFORD DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH

获取价格

SSW2N60A ETC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2A I(D) | TO-263AB

获取价格

SSW2N60ATM FAIRCHILD 暂无描述

获取价格

SSW2N60B FAIRCHILD 600V N-Channel MOSFET

获取价格

SSW2N60BTM FAIRCHILD Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o

获取价格

SSW2N80A FAIRCHILD Advanced Power MOSFET

获取价格