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SSW-524

更新时间： 2024-02-22 21:20:39
品牌 Logo 应用领域
STANFORD 开关射频微波
页数 文件大小 规格书
3页 199K
描述
DC - 8 GHZ GAAS MMIC SPST SWITCH

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SSW-524 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：SOP8,.3Reach Compliance Code：unknown
风险等级：5.92Is Samacsys：N
1dB压缩点：25 dBm其他特性：HIGH RELIABILITY
特性阻抗：50 Ω构造：COMPONENT
最大输入功率 (CW)：33.01 dBm最大插入损耗：1.9 dB
最小隔离度：25 dBJESD-609代码：e0
安装特点：SURFACE MOUNT功能数量：1
端子数量：8准时：0.01 µs
最大工作频率：8000 MHz最小工作频率：
最高工作温度：85 °C最低工作温度：-45 °C
封装主体材料：CERAMIC封装等效代码：SOP8,.3
端口终止：ABSORPTIVE电源：-5 V
射频/微波设备类型：SPST子类别：RF/Microwave Switches
表面贴装：YES技术：GAAS
端子面层：Tin/Lead (Sn/Pb)最大电压驻波比：1.7
Base Number Matches：1

SSW-524 数据手册

 浏览型号SSW-524的Datasheet PDF文件第2页浏览型号SSW-524的Datasheet PDF文件第3页 
Preliminary  
Preliminary  
Product Description  
Stanford Microdevices’ SSW-524 is a high performance  
Gallium Arsenide Field Effect Transistor MMIC switch housed  
in a low-cost surface-mountable 8-pin ceramic package.  
SSW-524  
DC-8 GHz GaAs MMIC  
SPST Switch  
This single-pole, single-throw, non-reflective switch con-  
sumes less than 50uA and operates at -5V and 0V for control  
bias. P1db at -5V is +25dBm typical and can be increased to  
+28dBm with -8V supply.  
The die is fabricated using 0.5 micron FET process with gold  
metallization and silicon nitride passivation to achieve  
excellent performance and reliability.  
Product Features  
• High Isolation : 40dB at 2GHz, 30dB at 8GHz  
• Low DC Power Consumption  
• Low Insertion Loss : 0.9dB at 2GHz  
• Non-Reflective (50 Ohm termination) when  
Isolated  
Isolation vs. Frequency  
VControl = -5 V  
-20  
• Low Cost Surface-Mountable Ceramic Package  
-30  
dB -40  
-50  
Applications  
• Analog/Digital Wireless Communications  
• AMPS, PCS, DEC and GSM  
-60  
DC  
1
2
3
4
5
6
7
8
GHz  
Electrical Specifications at Ta = 25C  
Parameters & Test Conditions:  
Symbol  
Units  
Min.  
Typ.  
Max.  
Zo = 50 ohms, VControl = -5V, Ta = 25oC  
Ins  
Insertion Loss  
f = 0.05-2.0 GHz  
f = 2.0-6.0 GHz  
f = 6.0-8.0 GHz  
dB  
dB  
dB  
0.9  
1.5  
1.8  
1.3  
1.9  
Isol  
Isolation  
f = 0.05-2.0 GHz  
f = 2.0-6.0 GHz  
f = 6.0-8.0 GHz  
dB  
dB  
dB  
35  
25  
45  
35  
30  
VSWR on  
VSWR off  
Input & Output VSWR  
(on or low loss state)  
f = 0.05-2.0 GHz  
f = 2.0-6.0 GHz  
f = 6.0-8.0 GHz  
1.3:1  
1.5:1  
1.7:1  
Input & Output VSWR  
(off or isolated state)  
f = 0.05-2.0 GHz  
f = 2.0-6.0 GHz  
f = 6.0-8.0 GHz  
1.3:1  
1.5:1  
1.7:1  
P1dB  
TOIP  
Output Power at 1dB Compression  
at 2 GHz  
V = -5V  
V = -8V  
dBm  
dBm  
+25  
+28  
Third Order Intercept Point  
V = -5V  
V = -8V  
dBm  
dBm  
+44  
+47  
Id  
Device Current  
uA  
40  
10  
Isw  
Switching Speed  
nsec  
10% to 90% or 90% to 10%  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
EDS-101286 Rev B  
123

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