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SSW-408 PDF预览

SSW-408

更新时间： 2024-01-08 21:41:28
品牌 Logo 应用领域
STANFORD 开关射频微波光电二极管
页数 文件大小 规格书
2页 107K
描述
DC-4 GHz High Power GaAs MMIC SPDT Switch

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SSW-408 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：SOP8,.25Reach Compliance Code：unknown
风险等级：5.92Is Samacsys：N
1dB压缩点：31 dBm特性阻抗：50 Ω
构造：COMPONENT最大输入功率 (CW)：37.78 dBm
最大插入损耗：1.5 dB最小隔离度：18 dB
JESD-609代码：e0安装特点：SURFACE MOUNT
功能数量：1端子数量：8
准时：0.01 µs最大工作频率：4000 MHz
最小工作频率：最高工作温度：85 °C
最低工作温度：-45 °C封装主体材料：PLASTIC/EPOXY
封装等效代码：SOP8,.25端口终止：ABSORPTIVE
电源：5/-5 V射频/微波设备类型：SPDT
子类别：RF/Microwave Switches表面贴装：YES
技术：GAAS端子面层：Tin/Lead (Sn/Pb)
最大电压驻波比：1.5Base Number Matches：1

SSW-408 数据手册

 浏览型号SSW-408的Datasheet PDF文件第2页 
Preliminary  
Product Description  
Stanford Microdevices’ SSW-408 is a high performance Gal-  
lium Arsenide Field Effect Transistor MMIC switch housed in a  
low-cost surface mountable small outline plastic package.  
SSW-408  
DC-4 GHz High Power GaAs MMIC  
SPDT Switch  
This single-pole, double-throw reflective switch consumes less  
than 50uA and can operate with positive or negative 3V to 8V  
supply voltages, making it suitable for use in both infrastruc-  
ture and subscriber equipment. This switch can be used in all  
analog and digital wireless communication systems including  
(but not limited to) AMPS, PCS, DECT, IS-95, IS-136, 802.11,  
CDPD and GSM.  
Product Features  
At +5V or –5V bias, typical output power at 1dB compression  
is 3 watts. 1dB output power over 4 watts and IP3 over +55dBm  
may be achieved with higher control voltages.  
• High Compression Point : up to 4 Watts  
• HIgh Linearity : TOIP +55dBm @2GHz  
• Low DC Power Consumption  
• Low Insertion Loss : 1.2dB at 2GHz  
• Operates from Positive or Negative 3V to 8V  
Supplies  
Isolation vs. Frequency  
VControl = -5 V  
-10  
• Low Cost Small Outline Plastic Package  
-20  
dB  
Applications  
-30  
• Analog/Digital Wireless Communications  
• Spread Spectrum  
-40  
DC  
1
2
3
4
• AMPS, PCS, DECT, IS-95, IS-136, 802.11,  
CDPD and GSM.  
GHz  
Electrical Specifications at Ta = 25C  
Parameters & Test  
Symbol  
Units  
Min.  
Typ.  
Max.  
Conditions: Zo = 50 ohms v = +5 or -5V  
Insertion Loss  
f = 0.05 - 1.0 GHz  
f = 1.00 - 2.0 GHz  
f = 2.00 - 4.00 GHz  
dB  
dB  
dB  
0.9  
1.2  
1.5  
1.3  
1.5  
Ins  
Isolation  
f = 0.05 - 1.0 GHz  
f = 1.00 - 2.0 GHz  
f = 2.00 - 4.00 GHz  
dB  
dB  
dB  
24  
18  
28  
22  
18  
Isol  
Input & Output VSWR  
(on port)  
f = 0.05 - 2.0 GHz  
f = 2.00 - 4.0 GHz  
1.2  
1.5  
VSWR on  
VSWR off  
Input & Output VSWR  
(off port)  
f = 0.05 - 2.0 GHz  
f = 2.00 - 4.0 GHz  
1.2  
1.5  
Output Power @ 2.0 GHz  
at 1 dB Compression  
V = +8V or -8V  
V = +5V or -5V  
V = +3V or -3V  
dB  
dB  
dB  
+36  
+34  
+31  
P1dB  
Third Order Intercept  
Device Current  
V = +8V or -8V  
V = +5V or -5V  
V = +3V or -3V  
dB  
dB  
dB  
+55  
+53  
+50  
TO IP  
uA  
40  
10  
Id  
Switching Speed  
10% to 90% or 90% to 10%  
nsec  
Isw  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
EDS-101099 Rev -A  
12

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