Datasheet > SSW-308

SSW-308

更新时间： 2024-02-29 01:58:38

品牌	Logo	应用领域
STANFORD		开关光电二极管
页数	文件大小	规格书
2页	83K
描述
DC-3 GHz Low Cost GaAs MMIC SPDT Switch

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技术参数
数据手册

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SSW-308 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SOP8,.25	Reach Compliance Code：	unknown
风险等级：	5.92	1dB压缩点：	31 dBm
其他特性：	HIGH RELIABILITY	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	33.01 dBm
最大插入损耗：	1.3 dB	最小隔离度：	16 dB
JESD-609代码：	e0	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	8
准时：	0.003 µs	最大工作频率：	3000 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-45 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SOP8,.25	端口终止：	REFLECTIVE
电源：	-5 V	射频/微波设备类型：	SPDT
子类别：	RF/Microwave Switches	表面贴装：	YES
技术：	GAAS	端子面层：	Tin/Lead (Sn/Pb)
最大电压驻波比：	1.7	Base Number Matches：	1

SSW-308 数据手册

Product Description

SSW-308

Stanford Microdevices’ SSW-308 is a high perfomance

Gallium Arsenide Field Effect Transistor MMIC switch housed

in a low-cost surface-mountable small outline plastic

package.

DC-3 GHz Low Cost

GaAs MMIC SPDT Switch

This single-pole, double-throw, reflective switch consumes

less than 40uA and operates with 0V/-5V control voltages.

This switch can be used in both analog and digital wireless

communication systems including AMPS, PCS, DECT, and

GSM.

Typical output power at 1dB compression is +28dBm. 1dB

output power over 1 watt may be achieved with higher

control voltages.

Product Features

• Fast Switching Speed : 3nsec

• HIgh LInearity : +47dBm IP3

• Ultra Low DC Power Consumption

•Low Insertion Loss : 0.7dB at 1GHz

• Low Cost Small Outline Plastic Package

The die is fabricated using 0.5 micron FET process with gold

metallization and silicon nitride passivation to achieve

excellent performance and reliability.

Isolation vs. Frequency

VControl = -5 V

-10

-20

-30

-40

-50

Applications

• Digital Cellular

• Spread Spectrum

GHz

Electrical Specifications at Ta = 25C

P a ra m e te rs : Te s t C o n d itio n s :

S y m b o l

U n its

M in .

Ty p .

M a x .

₀= 5 0 o h m s

In s

In s e rtio n L o s s

f = 0 .0 5 -1 .0 G H z

f = 1 .0 0 -2 .0 G H z

f = 1 .0 0 -3 .0 G H z

d B

0 .6

0 .9

1 .2

0 .9

1 .3

Is o l

Is o la tio n

f = 0 .0 5 -1 .0 G H z

f = 1 .0 0 -2 .0 G H z

f = 1 .0 0 -3 .0 G H z

d B

2 0

1 7

2 5

2 2

1 6

V S W R o n

In p u t & O u tp u t V S W R

(lo w lo s s s ta te )

f = 0 .0 5 -1 .0 G H z

f = 1 .0 0 -2 .0 G H z

f = 1 .0 0 -3 .0 G H z

1 .2 :1

1 .4 :1

1 .7 :1

P _{1 d B}

1 d B C o m p re s s io n a t 0 .5 -2 .0 G H z

T h ird O rd e r In te rc e p t

D e v ic e C u rre n t

-8 V

-5 V

d B m

+ 3 1

+ 2 8

IP ₃

-8 V

-5 V

d B m

+ 5 0

+ 4 7

I_D

u A

3 5

Is w

S w itc h in g S p e e d 5 0 % c o n tro l to

1 0 % /9 0 % R F

n s e c

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford

Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

7-21

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