Datasheet > SSW-224

SSW-224

更新时间： 2024-02-21 02:17:55

品牌	Logo	应用领域
STANFORD		开关射频微波光电二极管分离技术隔离技术
页数	文件大小	规格书
3页	163K
描述
DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH

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技术参数
数据手册

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SSW-224 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SOP8,.3	Reach Compliance Code：	unknown
风险等级：	5.92	Is Samacsys：	N
1dB压缩点：	29 dBm	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	33.01 dBm	最大插入损耗：	1.5 dB
最小隔离度：	30 dB	JESD-609代码：	e0
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	8	准时：	0.003 µs
最大工作频率：	6000 MHz	最小工作频率：
最高工作温度：	85 °C	最低工作温度：	-45 °C
封装主体材料：	CERAMIC	封装等效代码：	SOP8,.3
端口终止：	REFLECTIVE	电源：	-5 V
射频/微波设备类型：	SPDT	子类别：	RF/Microwave Switches
表面贴装：	YES	技术：	GAAS
端子面层：	Tin/Lead (Sn/Pb)	最大电压驻波比：	1.5
Base Number Matches：	1

SSW-224 数据手册

Preliminary

Product Description

Stanford Microdevices SSW-224 is a high perfomance

Gallium Arsenide Field Effect Transistor MMIC switch

housed in a low-cost surface-mountable 8-pin ceramic

package.

DC-6 GHz High Isolation

SPDT GaAs MMIC Switch

This single-pole, double-throw, reflective switch consumes

less than 50uA and operates at -5V and 0V for control bias.

Its high isolation and low insertion loss makes it ideal for T/R

switching in analog and digital wireless communication

systems.

Product Features

High Isolation : 40dB at 2GHz, 30dB at 6GHz

Low DC Power Consumption

The die is fabricated using 0.5 micron FET process with

gold metallization and silicon nitride passivation to achieve

excellent performance and reliability.

Broadband Performance - True DC Operation

Low Cost Surface-Mountable Ceramic Package

Isolation vs. Frequency

VControl = -5 V

-20

Applications

-30

-40

Analog/Digital Wireless System

Spread Spectrum

GPS

-50

-60

-70

GHz

Electrical Specifications at Ta = 25C

Symbol

Parameters: Test Conditions: Zo=50ohms

Units

Min.

Typ.

Max.

Ins

Insertion Loss

f = 0.05-2.0GHz

f = 2.00-4.0GHz

f = 4.05-6.0GHz

0.7

1.1

1.5

1.1

1.5

Isol

Isolation

f = 0.05-2.0GHz

f = 2.00-4.0GHz

f = 4.00-6.0GHz

VSWR on

Input & Output VSWR

(on or low loss state)

f = 0.05-2.0GHz

f = 2.00-4.0GHz

f = 4.00-6.0GHz

1.15

1.25

1.50

P1dB

TOIP

Output Power at 1dB Compression

f= 0.5-6.0GHz

V = -5V

V = -8V

dBm

+26

+29

Third Order Intercept Point

f= 0.5-6.0GHz

V = -5V

V = -8V

dBm

+45

+48

Device Current

Isw

Switching Speed

nsec

50% control to 10%/90%RF

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford

Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101423 Rev A

12 3

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