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SSW-124 PDF预览

SSW-124

更新时间： 2024-01-02 00:31:03
品牌 Logo 应用领域
STANFORD 开关射频微波光电二极管
页数 文件大小 规格书
3页 165K
描述
DC-6 GHz High Isolation SPDT GaAs MMIC Switch

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SSW-124 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SOP8,.3Reach Compliance Code：unknown
风险等级：5.89Is Samacsys：N
1dB压缩点：29 dBm其他特性：HIGH RELIABILITY
构造：COMPONENT最大输入功率 (CW)：33.01 dBm
最大插入损耗：1.5 dB最小隔离度：25 dB
JESD-609代码：e0安装特点：SURFACE MOUNT
功能数量：1端子数量：8
准时：0.003 µs最大工作频率：6000 MHz
最小工作频率：最高工作温度：85 °C
最低工作温度：-45 °C封装主体材料：CERAMIC
封装等效代码：SOP8,.3端口终止：ABSORPTIVE
电源：-5 V射频/微波设备类型：SPDT
子类别：RF/Microwave Switches表面贴装：YES
技术：GAAS端子面层：Tin/Lead (Sn/Pb)
最大电压驻波比：1.5Base Number Matches：1

SSW-124 数据手册

 浏览型号SSW-124的Datasheet PDF文件第2页浏览型号SSW-124的Datasheet PDF文件第3页 
Preliminary  
Preliminary  
Product Description  
SSW-124  
Stanford Microdevices’ SSW-124 is a high perfomance  
Gallium Arsenide Field Effect Transistor MMIC switch  
housed in a low-cost surface-mountable 8-pin ceramic  
package.  
DC-6 GHz High Isolation  
SPDT GaAs MMIC Switch  
This single-pole, double-throw, non-reflective switch  
consumes less than 50uA and operates at -5V and 0V for  
control bias. Its high isolation and low insertion loss, makes  
it ideal for T/R switching in analog and digital wireless  
communication systems.  
Product Features  
• High Isolation: 42dB at 2GHz, 30dB at 6GHz  
• Low DC Power Consumption  
The die is fabricated using 0.5 micron FET process with  
gold metallization and silicon nitride passivation to achieve  
excellent performance and reliability.  
• Non-reflective (50 Ohm termination) when  
Isolated  
Isolation vs. Frequency  
• Broadband Performance - True DC Operation  
VControl = -5 V  
• Low Cost Surface-Mountable Ceramic Package  
-30  
-40  
Applications  
-50  
-60  
-70  
dB  
• Analog/Digital Wireless System  
• Spread Spectrum  
• GPS  
DC  
1
2
3
4
5
6
GHz  
Electrical Specifications at Ta = 25C  
Symbol  
Parameters: Test Conditions  
Units  
Min.  
Typ.  
Max.  
Ins  
Insertion Loss  
f = 0.05-2.0GHz  
f = 2.00-4.0GHz  
f = 4.00-6.0GHz  
dB  
dB  
dB  
0.7  
1.0  
1.4  
1.1  
1.5  
Isol  
Isolation  
f = 0.05-2.0GHz  
f = 2.00-4.0GHz  
f = 4.00-6.0GHz  
dB  
dB  
dB  
40  
30  
25  
50  
40  
30  
VSWR on  
VSWR off  
Input & Output VSWR  
(on or low loss state)  
f = 0.05-2.0GHz  
f = 2.00-4.0GHz  
f = 4.00-6.0GHz  
1.15  
1.25  
1.50  
Input & Output VSWR  
(off or isolated state)  
f = 0.05-1.0GHz  
f = 1.00-2.0GHz  
f = 2.00-4.0GHz  
1.15  
1.25  
1.50  
P1dB  
TOIP  
Output Power at 1dB Compression  
f= 0.5-6.0GHz  
V = -5V  
V = -8V  
dBm  
dBm  
+26  
+29  
Third Order Intercept Point  
f= 0.5-6.0GHz  
V = -5V  
V = -8V  
dB  
dB  
+45  
+48  
Id  
Device Current  
uA  
40  
3
Isw  
Switching Speed  
nsec  
50% control to 10%/90%RF  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
1
http://www.stanfordmicro.com  
EDS-101422 Rev A  
123

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