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SPF-3043 PDF预览

SPF-3043

更新时间: 2024-01-21 17:30:12
品牌 Logo 应用领域
STANFORD 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 171K
描述
Low Noise pHEMT GaAs FET

SPF-3043 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.86Is Samacsys:N
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:7 V最大漏极电流 (Abs) (ID):0.06 A
最大漏极电流 (ID):0.06 AFET 技术:HIGH ELECTRON MOBILITY
最高频带:X BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:1
端子数量:4工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:0.42 W认证状态:Not Qualified
子类别:FET RF Small Signal表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

SPF-3043 数据手册

 浏览型号SPF-3043的Datasheet PDF文件第2页浏览型号SPF-3043的Datasheet PDF文件第3页 
Preliminary  
Product Description  
SPF-3043  
Stanford Microdevices’ SPF-3043 is a high performance  
0.25µm pHEMT Gallium Arsenide FET. This 300µm device is  
ideally biased at 3V,20mA for lowest noise performance and  
battery powered requirements. At 5V,40mA the device  
delivers excellent OIP3 of 32dBm. It provides ideal  
performance as a driver stage in many commercial and  
industrial LNA applications.  
Low Noise pHEMT GaAs FET  
Qualification Pending April 2001  
Product Features  
DC-10 GHz Operation  
Ultra Low NF:  
0.25 dB @ 1 GHz  
0.50 dB @ 2 GHz  
25 dB @ 1 GHz  
22 dB @ 2 GHz  
Typical Gain Performance  
35  
3V,20mA  
5V,40mA  
High Assoc. Gain:  
30  
Low Current Draw for NFopt (3V,20mA)  
+32 dBm OIP3, +20 dBm P1dB (5V,40mA)  
Low Cost High Performance pHEMT  
25  
20  
Gmax  
15  
Gain  
10  
Applications  
5
LNA for Wireless Infrastructure  
Fixed Wireless Infrastructure  
Wireless Data  
0
2
4
6
8
10  
Frequency (GHz)  
Driver Stage for Low Power Applications  
Device Characteristics, T = 25ºC  
VDS=3V, IDS=20mA (unless otherwise noted)  
Symbol  
GMAX  
Units  
dB  
Min.  
Typ.  
Max.  
Maximum Available Gain  
ZS=ZS*, ZL=ZL*  
f = 0.9 GHz  
f = 1.9 GHz  
25.5  
22.4  
Insertion Gain  
f = 0.9 GHz  
f = 1.9 GHz  
18.5  
18.0  
S21  
dB  
ZS=ZL=50Ω  
Minimum Noise Figure  
f = 0.9 GHz  
f = 1.9 GHz  
0.25  
0.50  
NFmin  
P1dB  
OIP3  
dB  
ZS=ΓOPT, ZL=ZL*  
Output 1 dB compression point  
ZS=ZSOPT, ZL=ZLOPT  
V
=3V, IDS=20 mA  
15.5  
20  
VDDSS=5V, IDS=40 mA  
dBm  
dBm  
Output Third Order Intercept Point  
ZS=ZSOPT, ZL=ZLOPT  
V
=3V, IDS=20 mA  
29  
32  
VDDSS=5V, IDS=40 mA  
VDS= 2V, IDS= 0.1 mA  
VDS= 2V, VGS = 0V  
VDS= 2V, VGS @ gmp  
VP  
IDSS  
gmp  
Pinchoff Voltage  
V
-1.1  
45  
-0.8  
67.5  
150  
-0.5  
100  
Saturated Drain Current  
Peak Transconductance  
mA  
mS  
100  
IG= 0.03 mA  
BVGSO  
Gate-to-Source Breakdown Voltage  
V
-10  
-8  
-8  
Drain Open, Source Grounded  
IG= 0.03 mA  
BVGDO  
Rth  
Gate-to-Drain Breakdown Voltage  
Thermal Resistance (junction to lead)  
V
-10  
Source Open, Drain Grounded  
ºC/W  
150  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.  
726 Palomar Ave., Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
1
http://www.stanfordmicro.com  
EDS-101772 Rev. A  

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