Preliminary
Preliminary
Product Description
SPF-3043
Stanford Microdevices’ SPF-3043 is a high performance
0.25µm pHEMT Gallium Arsenide FET. This 300µm device is
ideally biased at 3V,20mA for lowest noise performance and
battery powered requirements. At 5V,40mA the device
delivers excellent OIP3 of 32dBm. It provides ideal
performance as a driver stage in many commercial and
industrial LNA applications.
Low Noise pHEMT GaAs FET
Qualification Pending April 2001
Product Features
•
•
DC-10 GHz Operation
Ultra Low NF:
0.25 dB @ 1 GHz
0.50 dB @ 2 GHz
25 dB @ 1 GHz
22 dB @ 2 GHz
Typical Gain Performance
35
3V,20mA
5V,40mA
•
High Assoc. Gain:
30
•
•
•
Low Current Draw for NFopt (3V,20mA)
+32 dBm OIP3, +20 dBm P1dB (5V,40mA)
Low Cost High Performance pHEMT
25
20
Gmax
15
Gain
10
Applications
5
•
•
•
•
LNA for Wireless Infrastructure
Fixed Wireless Infrastructure
Wireless Data
0
2
4
6
8
10
Frequency (GHz)
Driver Stage for Low Power Applications
Device Characteristics, T = 25ºC
VDS=3V, IDS=20mA (unless otherwise noted)
Symbol
GMAX
Units
dB
Min.
Typ.
Max.
Maximum Available Gain
ZS=ZS*, ZL=ZL*
f = 0.9 GHz
f = 1.9 GHz
25.5
22.4
Insertion Gain
f = 0.9 GHz
f = 1.9 GHz
18.5
18.0
S21
dB
ZS=ZL=50Ω
Minimum Noise Figure
f = 0.9 GHz
f = 1.9 GHz
0.25
0.50
NFmin
P1dB
OIP3
dB
ZS=ΓOPT, ZL=ZL*
Output 1 dB compression point
ZS=ZSOPT, ZL=ZLOPT
V
=3V, IDS=20 mA
15.5
20
VDDSS=5V, IDS=40 mA
dBm
dBm
Output Third Order Intercept Point
ZS=ZSOPT, ZL=ZLOPT
V
=3V, IDS=20 mA
29
32
VDDSS=5V, IDS=40 mA
VDS= 2V, IDS= 0.1 mA
VDS= 2V, VGS = 0V
VDS= 2V, VGS @ gmp
VP
IDSS
gmp
Pinchoff Voltage
V
-1.1
45
-0.8
67.5
150
-0.5
100
Saturated Drain Current
Peak Transconductance
mA
mS
100
IG= 0.03 mA
BVGSO
Gate-to-Source Breakdown Voltage
V
-10
-8
-8
Drain Open, Source Grounded
IG= 0.03 mA
BVGDO
Rth
Gate-to-Drain Breakdown Voltage
Thermal Resistance (junction to lead)
V
-10
Source Open, Drain Grounded
ºC/W
150
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101772 Rev. A