Datasheet > SPA-1218

SPA-1218

更新时间： 2024-02-03 13:32:16

品牌	Logo	应用领域
STANFORD		放大器射频微波
页数	文件大小	规格书
5页	210K
描述
1960 MHz 1 Watt Power Amp with Active Bias

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技术参数
数据手册

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SPA-1218 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.8
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	11.5 dB	最大输入功率 (CW)：	29 dBm
JESD-609代码：	e0	最大工作频率：	1990 MHz
最小工作频率：	1930 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
端子面层：	Tin/Lead (Sn/Pb)	最大电压驻波比：	1.5
Base Number Matches：	1

SPA-1218 数据手册

Preliminary

Product Description

SPA-1218

Stanford Microdevices’ SPA-1218 is a high efficiency GaAs

Heterojunction Bipolar Transistor (HBT) amplifier housed in

a low-cost surface-mountable plastic package. These HBT

amplifiers are fabricated using molecular beam epitaxial

growth technology which produces reliable and consistent

performance from wafer to wafer and lot to lot.

1960 MHz 1 Watt Power Amp with

Active Bias

This product is specifically designed for use as a driver

amplifier for infrastructure equipment in the 1950 MHz PCS

band. Its high linearity makes it an ideal choice for multi-carrier

and digital applications.

Product Features

• On-chip Active Bias Control

•Patented High Reliability GaAsHBT Technology

•High Linearity Performance: +48dBm OIP3 Typ.

• Surface-Mountable Plastic Package

Active

Bias

VCC

VBIAS

Applications

RFOUT/

VCC

• PCS Systems

RFIN

N/C

• Multi-Carrier Applications

Input

Match

Parameters: Test Conditions:

Symbol

f₀

Units

MHz

dBm

Min.

Typ.

Max.

Z₀= 50 Ohms, VCC=5V, Temp = 27ºC

Frequency of Operation

1930

1990

Output Power at 1dB Compression

Vc₁, Vbias, Vc₂= 5.0V

29.5

P_1dB

Small Signal Gain

Input VSWR

12.0

S₂₁

S₁₁

1.5:1

Output Third Order Intercept Point

Power out per tone = +14 dBm

OIP₃

dBm

48.0

Icc

Device Current, VCC= 5V

320

R_th, j-l

Thermal Resistance (junction - lead)

ºC/W

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are

subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not

authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101428 Rev A

12 3 4 5

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