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SNA-676-TR3 PDF预览

SNA-676-TR3

更新时间： 2024-01-15 05:02:49
品牌 Logo 应用领域
STANFORD 放大器射频微波
页数 文件大小 规格书
3页 92K
描述
DC-6.5 GHZ , CASCADABLE GAAS MMIC AMPLIFIER

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SNA-676-TR3 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：SL,4LEAD,.073CIRCReach Compliance Code：unknown
风险等级：5.92Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
增益：8 dB最大输入功率 (CW)：23.01 dBm
安装特点：SURFACE MOUNT端子数量：4
最大工作频率：6500 MHz最小工作频率：
最高工作温度：85 °C最低工作温度：-45 °C
封装主体材料：CERAMIC封装等效代码：SL,4LEAD,.073CIRC
电源：5.7 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers表面贴装：YES
技术：GAAS最大电压驻波比：1.5
Base Number Matches：1

SNA-676-TR3 数据手册

 浏览型号SNA-676-TR3的Datasheet PDF文件第2页浏览型号SNA-676-TR3的Datasheet PDF文件第3页 
Product Description  
SNA-676  
Stanford Microdevices’ SNA-676 is a high-performance  
GaAs Heterojunction Bipolar Transistor (MMIC) housed in a  
low-cost surface mountable stripline package. A Darlington  
configuration is utilized for broadband performance to 6.5  
GHz.  
DC-6.5 GHz, Cascadable  
GaAs MMIC Amplifier  
These unconditionally stable amplifiers provide 11dB of gain  
and +18dBm of P1dB when biased at 5.7V and 70mA. This  
MMIC requires only a single suply voltage. The use of an  
external resistor allows for bias flexibility and stability.  
Also available in chip form (SNA-600), its small size (0.4mm  
x 0.4mm) and gold metallization make it an ideal choice for  
use in hybrid circuits.  
Product Features  
• Cascadable 50 Ohm Gain Block  
• 11dB Gain, +18dBm P1dB  
The SNA-676 is available in tape and reel at 1000, 3000 and  
5000 devices per reel.  
• High Linearity, +36dBm TOIP Typ.  
• 1.5:1 Input and Output VSWR  
•Operates From a Single DC Supply  
• Low Cost Stripline Mount Ceramic Package  
Output Power vs. Frequency  
22  
20  
18  
dBm  
16  
14  
12  
Applications  
0.1  
1
2
3
4
5
6
7
8
• Narrow and Broadband Linear Amplifiers  
• Commercial and Industrial Applications  
GHz  
Electrical Specifications at Ta = 25C  
P a r a m e t e r s : T e s t C o n d it io n s :  
Id 7 0 m A , Z 0 5 0 O h m s  
S y m b o l  
U n it s  
M in .  
T y p .  
M a x .  
=
=
f
f
=
=
0 .1 - 4 .0 G H z  
4 .0 - 6 .5 G H z  
d B  
d B  
9 .0  
8 .0  
11 .0  
9 .0  
S m a ll S ig n a l G a in  
3 d B B a n d w id th  
G
P
B W 3 d B  
P 1 d B  
G H z  
d B m  
6 .5  
f
f
=
=
0 .1 - 2 .0 G H z  
2 .0 - 6 .5 G H z  
1 8 .0  
1 6 .0  
O u tp u t P o w e r a t 1 d B C o m p re s s io n  
N o is e F ig u r e  
f
f
=
=
0 .1 - 4 .0 G H z  
4 .0 - 6 .5 G H z  
7 .5  
8 .5  
N F  
d B  
V S W R  
IP 3  
In p u t  
/
O u tp u t  
f
f
=
=
0 .1 - 6 .5 G H z  
0 .1 - 2 .0 G H z  
1 .5 :1  
3 6 .0  
T h ir d O r d e r In te r c e p t P o in t  
d B m  
G r o u p D e la y  
f
f
=
=
2 .0 G H z  
p s e c  
d B  
1 2 0  
1 7 .0  
T D  
IS O L  
V D  
R e v e r s e Is o la tio n  
D e v ic e V o lta g e  
0 .1 - 6 .5 G H z  
V
4 .8  
5 .7  
6 .8  
d G /d T  
d V /d T  
d B /d e g C  
m V /d e g C  
- 0 .0 0 2 3  
- 5 .0  
D e v ic e  
Te m p e r a tu r e C o e ffic ie n t  
G a in  
D e v ic e V o lta g e Te m p e r a tu r e C o e ffic ie n t  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
5-89  
123

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