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SNA-500 PDF预览

SNA-500

更新时间: 2024-02-28 16:32:23
品牌 Logo 应用领域
STANFORD 放大器
页数 文件大小 规格书
3页 58K
描述
DC-3 GHz, Cascadable GaAs MMIC Amplifier

SNA-500 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:DIE OR CHIP
Reach Compliance Code:unknown风险等级:5.92
特性阻抗:50 Ω构造:COMPONENT
增益:17.4 dB最大输入功率 (CW):23 dBm
JESD-609代码:e0最大工作频率:3000 MHz
最小工作频率:最高工作温度:85 °C
最低工作温度:-40 °C封装等效代码:DIE OR CHIP
电源:5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers技术:GAAS
端子面层:Tin/Lead (Sn/Pb)最大电压驻波比:1.5
Base Number Matches:1

SNA-500 数据手册

 浏览型号SNA-500的Datasheet PDF文件第2页浏览型号SNA-500的Datasheet PDF文件第3页 
Product Description  
SNA-500  
Stanford Microdevices’ SNA-500 is a GaAs monolithic  
broadband amplifier in die form. This amplifier provides  
19dB of gain when biased at 70mA and 5.0V. P1dB and  
TOIP may be improved by 2dB by baising @ 100mA.  
DC-3 GHz, Cascadable  
GaAs MMIC Amplifier  
External DC decoupling capacitors determine low fre-  
quency response. The use of an external resistor allows  
for bias flexibility and stability.  
These unconditionally stable amplifiers are designed for  
use as general purpose 50 ohm gain blocks. Also  
available in packaged form (SNA-576, -586 & -587), its  
small size (0.4mm x 0.4mm) and gold metallization make it an  
ideal choice for use in hybrid circuits.  
The SNA-500 is available in gel paks at 100 devices per  
container.  
Product Features  
Cascadable 50 Ohm Gain Block  
19dB Gain, +18dBm P1dB  
1.5:1 Input and Output VSWR  
Operates From Single Supply  
Chip Back Is Ground  
Output Power vs. Frequency  
22  
20  
18  
dB  
16  
14  
12  
Applications  
Narrow and Broadband Linear Amplifiers  
Commercial and Industrial Applications  
0.1  
1
2
3
4
5
GHz  
Electrical Specifications at Ta = 25C  
P a r a m e t e r s : T e s t C o n d itio n s :  
Id 7 0 m A , 5 0 O h m s  
S y m b o l  
U n it s  
M in .  
T y p .  
M a x .  
=
Z
=
0
f
f
f
=
=
=
0 . 1 - 1 . 0 G H z  
1 . 0 - 2 . 0 G H z  
2 . 0 - 3 . 0 G H z  
d B  
d B  
d B  
1 8 . 0  
1 6 . 0  
1 5 . 0  
2 0 . 0  
1 8 . 0  
1 7 . 0  
S m a ll S ig n a l P o w e r G a in  
G
P
G a in F la tn e s s  
3 d B B a n d w id th  
f
=
0 . 1 - 2 . 0 G H z  
d B  
+ /- 1 . 0  
3 . 0  
G
F
B W 3 d B  
G H z  
O u tp u t P o w e r a t 1 d B C o m p r e s s io n  
N o is e F ig u r e  
f
=
2 . 0 G H z  
d B m  
d B  
1 8 . 0  
P
1 d B  
N F  
f
f
=
=
2 . 0 G H z  
4 . 2  
5 . 0  
V S W R  
In p u t  
/
O u tp u t  
0 . 1 - 8 . 0 G H z  
1 . 5 :1  
T h ir d O r d e r In te r c e p t P o in t  
f
=
2 . 0 G H z  
d B m  
3 4 . 0  
IP  
3
G r o u p D e la y  
f
f
=
=
2 . 0 G H z  
p s e c  
d B  
1 2 0  
2 2 . 0  
T D  
IS O L  
V D  
R e v e r s e Is o la tio n  
D e v ic e V o lta g e  
0 . 1 - 8 . 0 G H z  
V
4 . 3  
5 . 0  
5 . 7  
d G /d T  
d V /d T  
a in  
d B /d e g C  
m V /d e g C  
- 0 . 0 0 2 7  
- 5 . 0  
D e v ic e  
G
T e m p e ra tu r e C o e ffic ie n t  
D e v ic e V o lta g e T e m p e r a tu re C o e ffic ie n t  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
5-69  

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