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SLN-186-TR3 PDF预览

SLN-186-TR3

更新时间: 2024-02-08 13:20:26
品牌 Logo 应用领域
STANFORD 放大器射频微波
页数 文件大小 规格书
3页 96K
描述
DC-4.0 GHz, 3.5 Volt 50 Ohm LNA MMIC Amplifier

SLN-186-TR3 技术参数

生命周期:Obsolete包装说明:SL,4GW-LD,.085CIR
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N其他特性:LOW NOISE
特性阻抗:50 Ω构造:COMPONENT
增益:19 dB最大输入功率 (CW):20 dBm
安装特点:SURFACE MOUNT端子数量:4
最大工作频率:4000 MHz最小工作频率:
最高工作温度:85 °C最低工作温度:-45 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SL,4GW-LD,.085CIR
电源:3.5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:GAAS最大电压驻波比:3
Base Number Matches:1

SLN-186-TR3 数据手册

 浏览型号SLN-186-TR3的Datasheet PDF文件第2页浏览型号SLN-186-TR3的Datasheet PDF文件第3页 
Product Description  
Stanford Microdevices’ SLN-186 is a high performance  
gallium arsenide heterojunction bipolar transistor MMIC  
housed in a low-cost surface mount plastic package.  
Darlington configuration is used for broadband performance  
from DC-4.0 GHz.  
SLN-186  
A
DC-4.0 GHz, 3.5 Volt  
50 Ohm LNA MMIC Amplifier  
The SLN-186 needs only 2 DC-blocking capacitors and a  
bias resistor for operation. Noise figure may be optimized by  
using 2-element matching at the input to yield <2.0dB noise  
figure.  
This 50 Ohm LNA requires only a single supply voltage and  
draws only 8mA. For broadband applications, it may be  
biased at 6mA with minimal effect on noise figure and gain.  
Product Features  
Patented, Reliable GaAs HBT Technology  
Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz  
High Associated Gain: 22dB Typ. at 2.0 GHz  
The SLN-186 is available in tape and reel at 1000, 3000 and  
5000 devices per reel.  
True 50 Ohm MMIC : No External Matching  
Required  
Noise Figure vs. Frequency  
Low Current Draw : Only 8mA  
3
Low Cost Surface Mount Plastic Package  
2.5  
6 mA  
dB  
Applications  
2
8 mA  
AMPS, PCS, DECT, Handsets  
Tri-Band & Broadband Receivers  
1.5  
0.1  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
GHz  
Electrical Specifications at Ta = 25C  
S y m b o l  
P a r a m e te rs : Te s t C o n d itio n s  
U n its  
M in .  
Ty p .  
M a x .  
N F  
5 0 O h m  
N ois e F igu re in 50 O hm s :  
V ds = 3 .5 V, Ids = 8 m A  
f = D C -1 .5 G H z  
f = 1.5-4.0 G H z  
d B  
d B  
2 .0  
2 .4  
2 .4  
5 0 O h m G ain:  
V ds = 3 .5 V, Ids = 8 m A  
f = D C -1 .5 G H z  
f = 1.5-4.0 G H z  
1 9  
2 2  
2 0  
d B  
-
S 2 1  
5 0 O h m M atch (In p ut a nd O u tp ut):  
V ds = 3 .5 V, Ids = 8 m A  
f = D C -1 .5 G H z  
f = 1.5-4.0 G H z  
1 .8 :1  
3 .0 :1  
V S W R  
N F  
5 0 O h m  
N ois e F igu re in 50 O hm s :  
V ds = 3 .2 V, Ids = 6 m A  
f = D C -1 .5 G H z  
f = 1.5-4.0 G H z  
d B  
d B  
2 .2  
2 .6  
2 .5  
5 0 O h m G ain:  
V ds = 3 .2 V, Ids = 6 m A  
f = D C -1 .5 G H z  
f = 1.5-4.0 G H z  
1 4  
1 7  
1 6  
d B  
-
S 2 1  
5 0 O h m M atch (In p ut a nd O u tp ut):  
V ds = 3 .2 V, Ids = 6 m A  
f = D C -1 .5 G H z  
f = 1.5-4.0 G H z  
1 .4 :1  
2 .5 :1  
V S W R  
O utpu t P o w e r at 1 dB C o m p re ss io n:  
f = D C -1 .5 G H z  
V d= 3 .5 V, Id = 8 m A  
V d= 3 .2 V, Id = 6 m A  
d B m  
d B m  
-1 0  
-1 2  
P 1 d B  
T hird O rde r Interce pt P oin t:  
f = D C -1 .5 G H z  
V d= 3 .5 V, Id = 8 m A  
V d= 3 .2 V, Id = 6 m A  
+ 5  
+ 3  
d B m  
IP 3  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
4-9  

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