Preliminary
Preliminary
Product Description
SHF-0186
DC-12 GHz, 0.5 Watt
AlGaAs/GaAs HFET
Stanford Microdevices’ SHF-0186 is a high performance GaAs
Heterostructure FET housed in a low-cost surface-mount plastic
package. HFET technology improves breakdown voltage while
minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
Output power at 1dB compression for the SHF-0186 is +28
dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
Product Features
•Patented AlGaAs/GaAs Heterostructure FET
Technology
Gain vs. Frequency
40
• +28 dBm P1dB Typical
VDS=8V, IDQ=100mA
• +40 dBm Output IP3 Typical
30
20
• High Drain Efficiency: Up to 46% at Class AB
• 17 dB Gain at 900 MHz (Application circuit)
• 15 dB Gain at 1900 MHz (Application circuit)
• Gmax Guaranteed at 12 GHz
Gmax
10
0
S21
-10
Applications
0
2
4
6
8
10
12
•Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
• AN-020 Contains detailed application circuits
Frequency (GHz)
Device Characteristics, T = 25ºC
VDS = 8V, IDQ = 100 mA
Symbol
Units
Min.
Typ.
Max.
f = 900 MHz, ZS=ZS*, ZL=ZL*
f = 1960 MHz, ZS=ZS*, ZL=ZL*
f = 12000 MHz, ZS=ZS*, ZL=ZL*
23.4
20.1
5.0
GMAX
Maximum Available Gain
dB
4.0
f = 900 MHz, ZS=ZL= 50 Ohms
f = 1960 MHz, ZS=ZL= 50 Ohms
18.0
15.2
S21
S21
Insertion Power Gain
Gain
dB
dB
13.7
f = 900 MHz, ZS=ZSOPT, ZL=ZLOPT
f = 1960 MHz, ZS=ZSOPT, ZL=ZLOPT
17.9
14.6
f = 900 MHz, ZS=ZSOPT, ZL=ZLOPT
f = 1960 MHz, ZS=ZSOPT, ZL=ZLOPT
28.0
28.8
P1dB
OIP3
IDSS
Output 1 dB compression point
dBm
dBm
mA
mS
V
f = 900 MHz, ZS=ZSOPT, ZL=ZLOPT
f = 1960 MHz, ZS=ZSOPT, ZL=ZLOPT
40.9
40.4
Output Third Order Intercept Point
Saturated Drain Current
300
175
-1.9
V
DS = 3V, VGS = 0V
Transconductance
gm
V
DS = 3V, VGS = 0V
Pinch-Off Voltage
VDS = 3V, IDQ = 1mA
VP
-2.7
-1.0
Vbgs
Vbgd
Rth
Gate-to-Source Breakdown Voltage, Igs = 1.2mA
Gate-to-Drain Breakdown Voltage, Igd = 1.2mA
Thermal Resistance (junction to lead)
V
V
-20
-20
66
-17
-17
ºC/W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101574 Rev A
5秒后页面跳转
全球首块英伟达H200交付 黄仁勋“送货上门”
常用8脚开关电源芯片型号大全
74HC04芯片引脚图及功能、应用电路图讲解
CR6842芯片参数、引脚配置、应用电路图详解
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
技术参数
数据手册
如果您发现信息不准确，
