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SGA-7489

更新时间： 2024-02-22 21:21:15
品牌 Logo 应用领域
STANFORD 射频微波
页数 文件大小 规格书
8页 520K
描述
DC-3000 MHZ SILICON GERMANIUM

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SGA-7489 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：TO-243
Reach Compliance Code：unknown风险等级：6.87
特性阻抗：50 Ω构造：COMPONENT
增益：18.5 dB最大输入功率 (CW)：16 dBm
JESD-609代码：e3安装特点：SURFACE MOUNT
功能数量：1端子数量：3
最大工作频率：3000 MHz最小工作频率：
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：TO-243
电源：5 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers最大压摆率：127 mA
表面贴装：YES技术：BIPOLAR
端子面层：Matte Tin (Sn)最大电压驻波比：10
Base Number Matches：1

SGA-7489 数据手册

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Preliminary  
Product Description  
SGA-7489  
Stanford Microdevices’ SGA-7489 is a high performance  
cascadeable 50-ohm amplifier designed for operation at 5  
Volts DC# This RFIC uses the latest Silicon Germanium  
Heterostructure Bipolar Transistor (SiGe HBT) process  
featuring 1 micron emitters with FT up to 50 GHz#  
DC-3000 MHz Silicon Germanium  
HBT Cascadeable Gain Block  
This circuit uses a darlington pair topology with resistive  
feedback for broadband performance as well as stability  
over its entire temperature range# Internally matched to  
50 ohm impedance, the SGA-7489 requires only DC blocking  
and bypass capacitors and a bias inductor for external  
components# Frequency performance may be extended using  
the 2 GHz application circuit shown on sheet 5#  
Product Features  
• DC-3000 MHz Operation  
• Single Voltage Supply  
S21 vs. Frequency, T=+25C, Id=130 mA  
25  
•High Output Intercept: +36 dBm typ" at 850 MHz  
•Low Noise Figure: 2"9 dB typ" at 850 MHz  
20  
15  
10  
5
Applications  
• OscillatorAmplifiers  
• PA for Low / Medium Power Applications  
• IF/ RF Buffer Amplifier  
• Drivers for CATV Amplifiers  
• LO Driver Amplifier  
0
0
500  
1000  
1500  
2000  
2500  
3000  
Frequency (MHz)  
Parameters: Test Conditions:  
Symbol  
P1dB  
Units  
Min!  
Typ!  
Max!  
Notes  
Z0 = 50 Ohms, ID = 130 mA, T = 25oC  
f = 100 MHz  
f = 500 MHz  
f = 850 MHz  
f = 1950 MHz *  
dBm  
dBm  
dBm  
dBm  
22ꢀ8  
22ꢀ6  
22ꢀ4  
20ꢀ3*  
* Using  
2 GHz  
AppꢀCktꢀ  
(sheet 5)  
Output Power at 1dB Compression  
f = 100 MHz  
f = 500 MHz  
f = 850 MHz  
f = 1950 MHz *  
dBm  
dBm  
dBm  
dBm  
38ꢀ6  
37ꢀ2  
36ꢀ0  
35ꢀ7*  
* Using  
2 GHz  
AppꢀCktꢀ  
(sheet 5)  
Third Order Intercept Point  
Power out per tone = 0 dBm  
IP3  
f = 100 MHz  
f = 500 MHz  
f = 850 MHz  
f = 1950 MHz *  
dB  
dB  
dB  
dB  
23ꢀ7  
23ꢀ0  
22ꢀ0  
18ꢀ3*  
* Using  
2 GHz  
AppꢀCktꢀ  
(sheet 5)  
Small Signal Gain  
S21  
Bandwidth  
(Determined by S11, S22 Values)  
Input Return Loss  
MHz  
dB  
3000  
11ꢀ8  
9ꢀ3  
S11  
S22  
f = DC-3000 MHz  
f = DC-3000 MHz  
Output Return Loss  
dB  
f = 100 MHz  
f = 500 MHz  
f = 850 MHz  
f = 1950 MHz *  
dB  
dB  
dB  
dB  
25ꢀ8  
25ꢀ8  
25ꢀ4  
22ꢀ7*  
* Using  
2 GHz  
AppꢀCktꢀ  
(sheet 5)  
Reverse Isolation  
S12  
NF  
Noise Figure, ZS = 50 Ohms  
Device Voltage  
f = 850 MHz  
dB  
V
2ꢀ9  
5ꢀ0  
82  
VD  
Rth,j-l  
Thermal Resistance (junction - lead)  
o C/W  
The information provided herein is believed to be reliable at press timeꢀ Stanford Microdevices assumes no responsibility for inaccuracies or omissionsꢀ  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own riskꢀ Prices and specifications are subject to change  
without noticeꢀ No patent rights or licenses to any of the circuits described herein are implied or granted to any third partyꢀ Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systemsꢀ  
Copyright 2001 Stanford Microdevices, Incꢀ All worldwide rights reservedꢀ  
726 Palomar Aveꢀ, Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
1
http://wwwꢀstanfordmicroꢀcom  
EDS-101801 Rev A  
12345678

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