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SGA-5386-TR2 PDF预览

SGA-5386-TR2

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
STANFORD /
页数 文件大小 规格书
7页 226K
描述
DC-3200 MHz Silicon Germanium HBT Cascadeable Gain Block

SGA-5386-TR2 数据手册

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Preliminary  
Product Description  
SGA-5386  
Stanford MicrodevicesSGA-5386 is a high performance  
cascadeable 50-ohm amplifier designed for operation at  
voltages as low as 3.6V. This RFIC uses the latest Silicon  
Germanium Heterostructure Bipolar Transistor (SiGe HBT)  
process featuring 1 micron emitters with FT up to 65 GHz.  
DC-3200 MHz Silicon Germanium  
HBT Cascadeable Gain Block  
This circuit uses a darlington pair topology with resistive  
feedback for broadband performance as well as stability  
over its entire temperature range. Internally matched to  
50 ohm impedance, the SGA-5386 requires only DC  
blocking and bypass capacitors for external components.  
Product Features  
DC-3200 MHz Operation  
Single Voltage Supply  
Small Signal Gain vs. Frequency  
High Output Intercept: +31dBm typ. at 850 MHz  
Low Current Draw: 60mA at 3.6V typ.  
Low Noise Figure: 3.5dB typ. at 850 MHz  
20  
15  
10  
5
dB  
Applications  
Oscillator Amplifiers  
0
PA for Low Power Applications  
IF/ RF Buffer Amplifier  
Drivers for CATV Amplifiers  
Frequency MHz  
Electrical Specifications at Ta = 25C  
Parameters: Test Conditions:  
Symbol  
Units  
Min.  
Typ.  
Max.  
Z0 = 50 Ohms, f = DC-3200MHz  
f = 850 MHz  
f = 1950 MHz  
dBm  
dBm  
17.0  
14.7  
Output Power at 1dB Compression  
Small Signal Gain  
P1dB  
f = DC-1000 MHz  
f = 1000-2000 MHz  
f = 2000-5000 MHz  
dB  
dB  
dB  
15.0  
17.2  
16.6  
15.5  
S21  
f = DC-1000 MHz  
f = 1000-2000 MHz  
f = 2000-5000 MHz  
dB  
dB  
dB  
20.8  
21.2  
21.2  
Reverse Isolation  
S12  
VSWR  
VSWR  
Input VSWR  
f = DC-5000 MHz  
f = DC-5000 MHz  
-
-
1.25:1  
1.25:1  
Output VSWR  
f = 850 MHz  
f = 1950 MHz  
dBm  
dBm  
31.0  
29.0  
Third Order Intercept Point  
Noise Figure  
IP3  
NF  
f = DC-1000 MHz  
f = 1000-2400 MHz  
dB  
dB  
3.5  
4.0  
Group Delay  
f = 1000 MHz  
pS  
V
112.0  
3.6  
TD  
VD  
ID  
Device Voltage  
Device Current  
3.1  
4.1  
mA  
60.0  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
Doc # EDS-100611 Rev. A  

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