Datasheet > SGA-5263

SGA-5263

更新时间： 2024-01-27 03:28:24

品牌	Logo	应用领域
STANFORD		射频微波
页数	文件大小	规格书
5页	259K
描述
DC-4500 mhz silicon GERMANIUM CASCADEABLE GAIN BLOCK

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SGA-5263 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.13	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	11.8 dB	最大输入功率 (CW)：	16 dBm
JESD-609代码：	e3	最大工作频率：	4500 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Matte Tin (Sn)	最大电压驻波比：	1.4
Base Number Matches：	1

SGA-5263 数据手册

Preliminary

Product Description

SGA-5263

Stanford Microdevices SGA-5263 is a high performance

cascadeable 50-ohm amplifier designed for operation at

voltages as low as 3.4V. This RFIC uses the latest Silicon

Germanium Heterostructure Bipolar Transistor (SiGe HBT)

process featuring 1 micron emitters with F_Tup to 50 GHz.

DC-4500 MHz, Silicon Germanium

Cascadeable Gain Block

This circuit uses a Darlington pair topology with resistive

feedback for broadband performance as well as stability over

its entire temperature range. Internally matched to 50 Ohm

impedance, the SGA-5263 requires only DC blocking and

bypass capacitors for external components.

Product Features

DC-4500 MHz Operation

Small Signal Gain vs. Frequency

Single Voltage Supply

Low Current Draw: 60mA at 3.4V typ.

High Output Intercept: 29 dBm typ. at 1950MHz

Applications

25C

-40C

85C

Oscillator Amplifiers

Broadband Gain Blocks

IF/RF Buffer Amplifiers

0.1

1.9

2.8

3.7

4.6

5.5

Frequency GHz

Parameters: Test Conditions:

Symbol

Units

Min.

Typ.

Max.

Z₀= 50 Ohms, I_D= 60 mA, T = 25ºC

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

dBm

16.3

15.0

14.0

Output Power at 1dB Compression

P_1dB

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

dBm

32.5

29.3

27.3

Third Order Intercept Point

Power out per tone = -10 dBm

IP₃

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

13.3

12.6

12.3

Small Signal Gain

S₂₁

Bandwidth

S₁₁

₁₁, S₂₂: Minimum 10db Return Loss (typ.)

MHz

4500

1.2:1

1.4:1

Input VSWR

f = 1950 MHz

Output VSWR

S₂₂

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

18.3

19.2

19.5

Reverse Isolation

S₁₂

V_D

Noise Figure

f = 1950 MHz

4.0

3.4

Device Voltage

Thermal Resistance (junction - lead)

ºC/W

255

R_th, j-l

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford

Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101540 Rev A

12 3 4 5

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